IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated

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IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated

IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)

IGBT With Antiparallel Diode • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode

IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

5 AMPERE POWER TRANSISTOR NPN SILICON

High Voltage NPN Silicon Transistors . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage — VCEO = 200 Volts • DC Current Gain Specified @ 1.0 and 2.5 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.8

POWER RECTIFIERS(4.0A,500-1000V)

Fast Settling, Video Op Amp with Disable

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