型号 功能描述 生产厂家&企业 LOGO 操作
BULT118

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

BULT118

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件:234.61 Kbytes Page:7 Pages

STMICROELECTRONICS

意法半导体

BULT118

High voltage fast-switching NPN power transistor

文件:245.69 Kbytes Page:10 Pages

STMICROELECTRONICS

意法半导体

BULT118

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR) 描述:TRANS NPN 400V 2A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件:234.61 Kbytes Page:7 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

文件:245.69 Kbytes Page:10 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 400V 2A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

RENESAS MCU

文件:916.47 Kbytes Page:126 Pages

RENESAS

瑞萨

CONTACT ON TAPE AND REEL

文件:303.95 Kbytes Page:2 Pages

KEYSTONE

Keystone Electronics Corp.

1?쓝1??Stratum 3E OCXO

文件:102.86 Kbytes Page:4 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

RENESAS MCU

文件:939.25 Kbytes Page:130 Pages

RENESAS

瑞萨

Aluminum electrolytic capacitors Axial High Temperature

文件:1.00814 Mbytes Page:19 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

BULT118产品属性

  • 类型

    描述

  • 型号

    BULT118

  • 功能描述

    两极晶体管 - BJT NPN Hi-Volt Fast Sw

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-8-14 23:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
24+
SOT23
12000
公司现货库存,支持实单
ST/意法
24+
NA/
1485
优势代理渠道,原装正品,可全系列订货开增值税票
ST
24+
TO-126
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
22+
TO126
100000
代理渠道/只做原装/可含税
ST
25+
TO-126
133
原装正品,假一罚十!
ST
25+
TO-126
16900
原装,请咨询
ST
21+
TO-126
115
原装现货假一赔十
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST/意法
25+
TO-126
880000
明嘉莱只做原装正品现货
23+
TO126
7300
专注配单,只做原装进口现货

BULT118数据表相关新闻