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BULK128D晶体管资料
BULK128D别名：BULK128D三极管、BULK128D晶体管、BULK128D晶体三极管
BULK128D生产厂家：
BULK128D制作材料：Si-N+Di
BULK128D性质：开关管 （S）_功率放大 （L）
BULK128D封装形式：直插封装
BULK128D极限工作电压：700V
BULK128D最大电流允许值：4A
BULK128D最大工作频率：<1MHZ或未知
BULK128D引脚数：3
BULK128D最大耗散功率：55W
BULK128D放大倍数：
BULK128D图片代号：B-21
BULK128Dvtest：700
BULK128Dhtest：999900
- BULK128Datest：4
BULK128Dwtest：55
BULK128D代换 BULK128D用什么型号代替：
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BULK128D | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is design | STMICROELECTRONICS 意法半导体 |   | |
BULK128D | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | STMICROELECTRONICS 意法半导体 | | |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is design | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：SOT-82 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 4A SOT82-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | STMICROELECTRONICS 意法半导体 | | ||
N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching | PHILIPS 飞利浦 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
Silicon Complementary Transistors Audio Output, Video, Driver Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide c | NTE | | ||
Silicon Complementary Transistors General Purpose Amp Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features: • High VCE Ratings • Exceptional Power Dissipation Capability | NTE | | ||
Silicon epitaxial planar type 文件：49.24 Kbytes Page：2 Pages | PANASONIC 松下 | |
BULK128D产品属性
- 类型
描述
- 型号
BULK128D
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
TO-126 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
ST/意法 |
25+ |
TO-126 |
30000 |
全新原装现货,价格优势 |
|||
STMicroelectronics |
25+ |
N/A |
20948 |
样件支持,可原厂排单订货! |
|||
STMicroelectronics |
25+ |
N/A |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST |
04+ |
TO-126 |
1940 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
22+ |
TO-126 |
6000 |
十年配单,只做原装 |
|||
2023+ |
5800 |
进口原装,现货热卖 |
|||||
ST/意法 |
25+ |
TO-126 |
90000 |
全新原装现货 |
|||
ST |
23+24 |
TO-126 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
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BULK128D规格书下载地址
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BULK128D数据表相关新闻
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2019-10-31
DdatasheetPDF页码索引
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