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BUL45晶体管资料
BUL45别名：BUL45三极管、BUL45晶体管、BUL45晶体三极管
BUL45生产厂家：美国摩托罗拉半导体公司
BUL45制作材料：Si-NPN
BUL45性质：开关管 （S）_功率放大 （L）
BUL45封装形式：直插封装
BUL45极限工作电压：400V
BUL45最大电流允许值：5A
BUL45最大工作频率：20MHZ
BUL45引脚数：3
BUL45最大耗散功率：70W
BUL45放大倍数：
BUL45图片代号：B-10
BUL45vtest：400
BUL45htest：20000000
- BUL45atest：5
BUL45wtest：70
BUL45代换 BUL45用什么型号代替：
BUL45价格
参考价格：￥2.6249
型号：BUL45D2G 品牌：ON 备注：这里有BUL45多少钱，2025年最近7天走势，今日出价，今日竞价，BUL45批发/采购报价，BUL45行情走势销售排行榜，BUL45报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BUL45 | Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Fast switching speed ·High voltage APPLICATIONS ·Designed for use in electronic ballast and In switchmode power supplies | SAVANTIC |   | |
BUL45 | Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Fast switching speed ·High voltage APPLICATIONS ·Designed for use in electronic ballast and In switchmode power supplies | ISC 无锡固电 | | |
BUL45 | POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS NPN Silicon Power Transistor High Voltage SWITCHMODE™ Series Designed for use in electronic ballast (light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: • Improved Efficiency Due to: — Low Base Drive Requirements (High and Flat DC Current Gain | Motorola 摩托罗拉 | | |
BUL45 | POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast (light ballast) and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: ♦ Low Base Drive Requirements (High and Flat DC Current Gain hFE) ♦ Low Power Losses ( | ONSEMI 安森美半导体 | | |
BUL45 | NPN Silicon Power Transistor 文件：120.97 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
BUL45 | 封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 400V 5A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
BUL45 | Silicon NPN Power Transistors 文件：93.48 Kbytes Page：3 Pages | SAVANTIC | | |
BUL45 | POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS | ONSEMI 安森美半导体 | | |
POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS The BUD45D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features: • Low | Motorola 摩托罗拉 | | ||
POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time | ONSEMI 安森美半导体 | | ||
High Speed, High Gain Bipolar NPN Power Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor (H2BIP). High dynamic characteristics and lot−to−lot minimum spread (±150 ns on storage ti | ONSEMI 安森美半导体 | | ||
POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast (light ballast) and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: ♦ Low Base Drive Requirements (High and Flat DC Current Gain hFE) ♦ Low Power Losses ( | ONSEMI 安森美半导体 | | ||
POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS NPN Silicon Power Transistor High Voltage SWITCHMODE™ Series Designed for use in electronic ballast (light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: • Improved Efficiency Due to: — Low Base Drive Requirements (High and Flat DC Current Gain | Motorola 摩托罗拉 | | ||
NPN Silicon Power Transistor NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast (light ballast) and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: ♦ Low Base Drive Requirements (High and Flat DC Current Gain hFE) ♦ Low Power Losses ( | ONSEMI 安森美半导体 | | ||
NPN Silicon Power Transistor 文件：120.97 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
High Speed, High Gain Bipolar NPN Power Transistor 文件：227.88 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
NPN Bipolar Power Transistor | ONSEMI 安森美半导体 | | ||
High Speed, High Gain Bipolar NPN Power Transistor 文件：227.88 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-220-3 包装：管件 描述：TRANS NPN 400V 5A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
High Speed, High Gain Bipolar NPN Power Transistor 文件：227.88 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
NPN Silicon Power Transistor 文件：120.97 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | |
BUL45产品属性
- 类型
描述
- 型号
BUL45
- 功能描述
两极晶体管 - BJT 5A 400V 75W NPN
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
26+ |
NA |
60000 |
只有原装 可配单 |
|||
ON/安森美 |
2022+ |
5000 |
只做原装,价格优惠,长期供货。 |
||||
ON |
17+ |
TO-220F |
6200 |
||||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON |
24+ |
原厂封装 |
65250 |
支持样品,原装现货,提供技术支持! |
|||
onsemi(安森美) |
24+ |
TO-220 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
MOTOROLA/摩托罗拉 |
24+ |
TO220F |
22055 |
郑重承诺只做原装进口现货 |
|||
ONS |
24+ |
原厂封装 |
2000 |
原装现货假一罚十 |
|||
ON |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
ST/意法 |
24+ |
NA/ |
11918 |
原装现货,当天可交货,原型号开票 |
BUL45芯片相关品牌
BUL45规格书下载地址
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BUL45数据表相关新闻
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DdatasheetPDF页码索引
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