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BUL45晶体管资料

  • BUL45别名:BUL45三极管、BUL45晶体管、BUL45晶体三极管

  • BUL45生产厂家:美国摩托罗拉半导体公司

  • BUL45制作材料:Si-NPN

  • BUL45性质:开关管 (S)_功率放大 (L)

  • BUL45封装形式:直插封装

  • BUL45极限工作电压:400V

  • BUL45最大电流允许值:5A

  • BUL45最大工作频率:20MHZ

  • BUL45引脚数:3

  • BUL45最大耗散功率:70W

  • BUL45放大倍数

  • BUL45图片代号:B-10

  • BUL45vtest:400

  • BUL45htest:20000000

  • BUL45atest:5

  • BUL45wtest:70

  • BUL45代换 BUL45用什么型号代替

BUL45价格

参考价格:¥2.6249

型号:BUL45D2G 品牌:ON 备注:这里有BUL45多少钱,2026年最近7天走势,今日出价,今日竞价,BUL45批发/采购报价,BUL45行情走势销售排行榜,BUL45报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BUL45

POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast (light ballast) and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: ♦ Low Base Drive Requirements (High and Flat DC Current Gain hFE) ♦ Low Power Losses (

ONSEMI

安森美半导体

BUL45

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Fast switching speed ·High voltage APPLICATIONS ·Designed for use in electronic ballast and In switchmode power supplies

ISC

无锡固电

BUL45

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Fast switching speed ·High voltage APPLICATIONS ·Designed for use in electronic ballast and In switchmode power supplies

SAVANTIC

BUL45

POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

NPN Silicon Power Transistor High Voltage SWITCHMODE™ Series Designed for use in electronic ballast (light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: • Improved Efficiency Due to: — Low Base Drive Requirements (High and Flat DC Current Gain

MOTOROLA

摩托罗拉

BUL45

POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

ONSEMI

安森美半导体

BUL45

Silicon NPN Power Transistors

文件:93.48 Kbytes Page:3 Pages

SAVANTIC

BUL45

封装/外壳:TO-220-3 包装:散装 描述:TRANS NPN 400V 5A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

BUL45

NPN Silicon Power Transistor

文件:120.97 Kbytes Page:8 Pages

ONSEMI

安森美半导体

POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time

ONSEMI

安森美半导体

NPN Bipolar Power Transistor

The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. • Low Base Drive Requirement\n• High Peak DC Current Gain (55 Typical) @ IC = 100 mA\n• Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread\n• Integrated Collector-Emitter Free Wheeling Diode\n• Fully Characterized and Guaranteed Dynamic VCE(sat)\n• \";

ONSEMI

安森美半导体

POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS

The BUD45D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features: • Low

MOTOROLA

摩托罗拉

High Speed, High Gain Bipolar NPN Power Transistor

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor (H2BIP). High dynamic characteristics and lot−to−lot minimum spread (±150 ns on storage ti

ONSEMI

安森美半导体

POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast (light ballast) and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: ♦ Low Base Drive Requirements (High and Flat DC Current Gain hFE) ♦ Low Power Losses (

ONSEMI

安森美半导体

POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

NPN Silicon Power Transistor High Voltage SWITCHMODE™ Series Designed for use in electronic ballast (light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: • Improved Efficiency Due to: — Low Base Drive Requirements (High and Flat DC Current Gain

MOTOROLA

摩托罗拉

NPN Silicon Power Transistor

NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast (light ballast) and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: ♦ Low Base Drive Requirements (High and Flat DC Current Gain hFE) ♦ Low Power Losses (

ONSEMI

安森美半导体

NPN Silicon Power Transistor

文件:120.97 Kbytes Page:8 Pages

ONSEMI

安森美半导体

High Speed, High Gain Bipolar NPN Power Transistor

文件:227.88 Kbytes Page:11 Pages

ONSEMI

安森美半导体

High Speed, High Gain Bipolar NPN Power Transistor

文件:227.88 Kbytes Page:11 Pages

ONSEMI

安森美半导体

High Speed, High Gain Bipolar NPN Power Transistor

文件:227.88 Kbytes Page:11 Pages

ONSEMI

安森美半导体

封装/外壳:TO-220-3 包装:管件 描述:TRANS NPN 400V 5A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

NPN Silicon Power Transistor

文件:120.97 Kbytes Page:8 Pages

ONSEMI

安森美半导体

BUL45产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Status:

    Active

  • Polarity:

    NPN

  • Type:

    General Purpose

  • VCE(sat) Max (V):

    0.8

  • IC Cont. (A):

    5

  • VCEO Min (V):

    400

  • VCBO (V):

    700

  • VEBO (V):

    12

  • VBE(sat) (V):

    0.8

  • hFE Min:

    22

  • PTM Max (W):

    75

  • Package Type:

    TO-220-3

更新时间:2026-5-14 14:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
24+
TO-220
626
原装现货热卖
ON
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ON/安森美
2022+
5000
只做原装,价格优惠,长期供货。
onsemi(安森美)
24+
TO-220
942
原厂订货渠道,支持BOM配单一站式服务
ONSEMI
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
ON(安森美)
26+
NA
60000
只有原装 可配单
ON
25+
TO-220
9500
百分百原装正品 真实公司现货库存 本公司只做原装 可
MOTOLORA
00+
TO-220
2973
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON
26+
SMD1808
86720
全新原装正品价格最实惠 假一赔百
ON(安森美)
24+
N/A
18000
原装正品现货支持实单

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