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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BUK9E06-55B | N-channelTrenchMOSTMlogiclevelFET [Philips] Generaldescription N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingPhilipsHigh-PerformanceAutomotive(HPA)TrenchMOS™technology,featuringverylowon-stateresistance. Features ■TrenchMOS™technology ■Q101compliant ■175°Crated ■Log | ETC1List of Unclassifed Manufacturers 未分类制造商 |  |   |
BUK9E06-55B | iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitchi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
BUK9E06-55B | N-channelTrenchMOSFET 1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusing TrenchMOStechnology.Thisproducthasbeendesignedandqualifiedtotheappropriate AECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits Lowconduction | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | |
BUK9E06-55B | N-channelTrenchMOSFET 文件：194.92 Kbytes Page：13 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | |
N-channelTrenchMOSFET 文件：194.92 Kbytes Page：13 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | | |
iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitchi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-channelTrenchMOSlogiclevelFET 文件：827.57 Kbytes Page：14 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
TrenchMOSlogiclevelFET 文件：115.2 Kbytes Page：16 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |  | |
BUK9E06-55B产品属性
- 类型
描述
- 型号
BUK9E06-55B
- 功能描述
MOSFET HIGH PERF TRENCHMOS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NXP |
23+ |
TO-262 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
NXP |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
PH |
08+(pbfree) |
TO-262SOT226I2-PAK |
8866 |
||||
PHNXP |
23+ |
TO-262SOT226I2-PAK |
10000 |
公司只做原装正品 |
|||
PHILIPS/飞利浦 |
23+ |
NA/ |
3309 |
原装现货,当天可交货,原型号开票 |
|||
NXP(恩智浦) |
23+ |
标准封装 |
247048 |
全新原装正品/价格优惠/质量保障 |
|||
NXP-恩智浦 |
24+25+/26+27+ |
TO-262-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
NEXPERIA/安世 |
22+ |
SOT226 |
360000 |
进口原装房间现货实库实数 |
|||
PHILIPS |
2023+ |
SMD |
5000 |
安罗世纪电子只做原装正品货 |
|||
PHI |
22+ |
TO-262 |
32350 |
原装正品 假一罚十 公司现货 |
BUK9E06-55B芯片相关品牌
BUK9E06-55B规格书下载地址
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BUK9E06-55B数据表相关新闻
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焕盛达竭诚为您提供一站式配套服务。当天下单，当天发货；
2020-9-17
DdatasheetPDF页码索引
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