isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  L

N-channel TrenchMOS logic level FET

TrenchMOS??logic level FET

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N-channel TrenchMOS logic level FET

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Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

RS232, #24-7c, SR-PVC, O/A FoilBraid, PVC Jkt, CMG

Product Description Computer EIA RS-232 Cable, 24 AWG stranded (7x32) tinned copper conductors, semi-rigid PVC insulation, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), PVC jacket.

Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

RF amplifier

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Design Consideration for Interleaved Boundary Conduction Mode PFC

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