TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Standard level compatible. Applications ■ Automotive and general

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance.

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Standard level compatible. Applications ■ Automotive a

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi

BUK7620-100A - N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET

文件：231.97 Kbytes Page：13 Pages

TrenchMOS transistor Standard level FET

N-channel TrenchMOS standard level FET

CABLE CLAMPS AND TIES

文件：104.09 Kbytes Page：2 Pages

Specialty Female Connectors

文件：169.73 Kbytes Page：1 Pages

3M??Cold Shrink QT-III Silicone Rubber Skirted and Inverted Skirted Termination Kits

文件：272.16 Kbytes Page：16 Pages

Compatible with MIPI RFFE

文件：185 Kbytes Page：4 Pages

Multiband Multimode PA Quad-Band GSM/EDGE and Multi Mode

文件：193.78 Kbytes Page：4 Pages