TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Standard level compatible. Applications ■ Automotive and general

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switch

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and gen

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance.

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Standard level compatible. Applications ■ Automotive a

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET

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TrenchMOS transistor Standard level FET

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TrenchMOS transistor Standard level FET

N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET1

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Universal Aggregation/Core Switch Platform

Key Hardware Features • Three models – two models with no MACsec and one model with MACsec in a fixed 1U form factor • AC and DC power options • Back-to-front and front-to-back airflow options • Up to 8-unit stacking • Integrated Application Hosting enables 3rd-party applications without impa

10-Bit, 12-Bit, Multiplying D/A Converters

Description The AD7520/AD7530 and AD7521/AD7531 are monolithic, high accuracy, low cost 10-bit and 12-bit  resolution, multiplying digital-to-analog converters (DAC). Intersil’ thin-film on CMOS processing gives up to 10-bit accuracy with TTL/CMOS compatible operation. Digital inputs are fully pr

CMOS 10&12-Bit Monolithic Multiplying D/A Converters

GENERAL DESCRIPTION The AD7520 (AD7521) is a low cost, monolithic 10-bit (12-bit) multiplying digital-to-analog converter packaged in g 16-pin (18-pin) DIP. The devices use advanced CMOS and thin film technologies providing up to 10-bit accuracy with TTL/DTL/CMOS compatibility.

PIN RECEPTACLES

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10-Bit, 12-Bit, Multiplying D/A Converters

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