isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

BUK7227-100B - N-channel TrenchMOS standard level FET

TrenchMOS standard level FET

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N-channel TrenchMOS standard level FET

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T-1 Wire Terminal (standard)

T-1 Wire Terminal (standard) T-1 Sub-Midget Flange Base

Female Cord Connectors

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2.11-2.17 GHz Small-Cell Power Amplifier Module

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Sub-Midget Flange Base, Wire Terminal

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300mA TinyPowerTM LDO

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