isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

BUK72150-55A - N-channel TrenchMOS standard level FET

TrenchMOS standard level FET

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N-channel TrenchMOS standard level FET

TUNING VARACTOR

[TEMEX] Description This series of silicon tuning varactors have an epitaxial mesa design with a high temperature passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family is designed for a low cost medium to high volume market that may be supplied in t

TUNING VARACTOR

[TEMEX] Description This series of silicon tuning varactors have an epitaxial mesa design with a high temperature passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family is designed for a low cost medium to high volume market that may be supplied in t