型号 功能描述 生产厂家 企业 LOGO 操作
BUK637-400B

PowerMOS transistor Fast recovery diode FET

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable for motor control applications, eg. In full bridge configurations for which faster recovery characteristics simplify design for indu

Philips

飞利浦

BUK637-400B

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 400V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

ISC

无锡固电

BUK637-400B

PowerMOS transistor Fast recovery diode FET

ETC

知名厂家

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 400V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

ISC

无锡固电

BUK637-400B产品属性

  • 类型

    描述

  • 型号

    BUK637-400B

  • 制造商

    PHILIPS

  • 制造商全称

    NXP Semiconductors

  • 功能描述

    PowerMOS transistor Fast recovery diode FET

更新时间:2026-1-5 13:53:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
24+
NA/
18500
优势代理渠道,原装正品,可全系列订货开增值税票
GENERAL
24+
SOT-23
9000
公司现货库存,支持实单
恩XP
25+
TO-220
1994
原装正品,假一罚十!
恩XP
24+
TO-220
60000
全新原装现货
恩XP
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
PHI
23+
TO-3P
900000
原厂授权一级代理,专业海外优势订货,价格优势、品种
恩XP
20+
TO-220AB
36900
原装优势主营型号-可开原型号增税票
恩XP
23+
TO-220AB
50000
全新原装正品现货,支持订货
N
24+
TO220
5000
全现原装公司现货
PHI
TO-247
22+
6000
十年配单,只做原装

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