PowerMOS transistor Logic level TOPFET

DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications. FEATURES • Vertical power DMOS output stage • Low on-state resistance • Overload protection again

PowerMOS transistor Logic level TOPFET

PowerMOS transistor Logic level TOPFET

PowerMOS transistor

封装/外壳：TO-220-3 包装：托盘 描述：IC PWR TOPFET LOGIC LVL TO220AB 集成电路（IC） 配电开关，负载驱动器

封装/外壳：TO-220-3 包装：托盘 描述：IC PWR DRIVER N-CHAN 1:1 TO220AB 集成电路（IC） 配电开关，负载驱动器

MOSFET N-CH 50V 29A TO220AB

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER

DESCRIPTION The STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatness is less than 1 dB. The STB7101 is housed in a very small SMD

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Precision Wirewound Resistors

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Smooth, high torque, roller ratchet handle

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