8.0A GLASS PASSIVATED BRIDGE RECTIFIER

Features ● Glass Passivated Die Construction ● High Case Dielectric Strength of 1500VRMS ● Low Reverse Leakage Current ● Surge Overload Rating to 200A Peak ● Ideal for Printed Circuit Board Applications ● UL Listed Under Recognized Component Index, File Number E94661 ● Lead Free Finish,

8 AMP SILICON BRIDGE RECTIFIER

FEATURES ● Rating to 1000V PRV ● Ideal for printed circuit board ● Surge overload rating 300 Amperes peak ● Reliable low cost construction utilizing molded plastic technique ● Plastic material has UL ● UL recognized: File #E106441 ● UL recognized 94V-O plastic material

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in three-phase AC motor control systems

SINGLE PHASE 8.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS

FEATURES * Ideal for printed circuit board * Reliable low cost construction * Plastic material has Underwriters Laboratory flammability classifications 94V.O * Surge overload rating 200 amperes peak.

HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON

DESCRIPTION The BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance. ■ STMicroelectronics PREFERRED SALESTYPE ■ NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE

8.0A BRIDGE RECTIFIER

Features • Diffused Junction • Low Forward Voltage Drop • High Current Capability • High Reliability • High Surge Current Capability • Ideal for Printed Circuit Boards • UL Recognized File # E157705

HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON

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8.0A BRIDGE RECTIFIER

HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR

DESCRIPTION The BU808DFH is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance. ■ NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS ■ NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING D

HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON

DESCRIPTION The BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance. ■ STMicroelectronics PREFERRED SALESTYPE ■ NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE

HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON

DESCRIPTION The BU808DFP is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance. ■ STMicroelectronics PREFERRED SALESTYPE ■ NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE ■

HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR

n STMicroelectronics PREFERRED SALESTYPE n NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE n HIGH VOLTAGE CAPABILITY (> 1400 V) n HIGH DC CURRENT GAIN (TYP. 150) n FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING n LOW BASE-DRIVE REQUIREMENTS n DEDICATED APPLICATIO

HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR

封装/外壳：ISOWATT-218-3 包装：卷带（TR） 描述：TRANS NPN DARL 700V ISOWATT218 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON

文件：1.1892 Mbytes Page：5 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON

HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR

文件：1.22414 Mbytes Page：5 Pages

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)