位置:首页 > IC中文资料 > BU705DF

BU705DF晶体管资料

  • BU705DF别名:BU705DF三极管、BU705DF晶体管、BU705DF晶体三极管

  • BU705DF生产厂家

  • BU705DF制作材料:Si-N+Di

  • BU705DF性质:绝缘 (Iso)

  • BU705DF封装形式:直插封装

  • BU705DF极限工作电压:1500V

  • BU705DF最大电流允许值:2.5A

  • BU705DF最大工作频率:<1MHZ或未知

  • BU705DF引脚数:3

  • BU705DF最大耗散功率:29W

  • BU705DF放大倍数

  • BU705DF图片代号:B-70

  • BU705DFvtest:1500

  • BU705DFhtest:999900

  • BU705DFatest:2.5

  • BU705DFwtest:29

  • BU705DF代换 BU705DF用什么型号代替:BU076DF,2SD1553,2SD1649,2SD1876,

型号 功能描述 生产厂家 企业 LOGO 操作
BU705DF

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) • High Switching Speed • Built-in Integrated Efficiency Diode APPLICATIONS • Designed for use in horizontal deflection circuits of TV receivers.

ISC

无锡固电

BU705DF

Silicon NPN Power Transistor

文件:137.31 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BU705DF

Trans GP BJT NPN 700V 2.5A

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

MOTOROLA

摩托罗拉

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 150.0 Watts Single Ended Package Style AM HIGH EFFICI

POLYFET

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

POLYFET

GaAlAs Semiconductor Laser

文件:40.45 Kbytes Page:2 Pages

PANASONIC

松下

Silicon MOS IC

文件:30.64 Kbytes Page:2 Pages

PANASONIC

松下

BU705DF产品属性

  • 类型

    描述

  • Configuration:

    Single

  • Material:

    Si

  • Maximum Collector Emitter Saturation Voltage:

    5@0.9A@2AV

  • Maximum Collector Emitter Voltage:

    700V

  • Maximum DC Collector Current:

    2.5A

  • Maximum Emitter Base Voltage:

    5V

  • Maximum Operating Temperature:

    150ᄀC

  • Maximum Power Dissipation:

    29000mW

  • Maximum Transition Frequency:

    7(Typ)MHz

  • Type:

    NPN

更新时间:2026-5-14 18:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM/罗姆
25+
VSON010V3030
24500
罗姆全系列在售
Rohm(罗姆)
18+
9800
代理进口原装/实单价格可谈
ROHM/罗姆
24+
VSON-10
45000
原装现货,专业配单专家
Rohm(罗姆)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ROHM/罗姆
23+
VSON010V3030
15800
专业配单,原装正品假一罚十,代理渠道价格优
24+
TO-3PN
10000
全新
ST
23+
NA
2860
原装正品代理渠道价格优势
ROHM/罗姆
21+
VSON-10
45000
只做原装,一定有货,不止网上数量,量多可订货!
ROHM
25+
N/A
90000
一级代理商进口原装现货、价格合理
ROHM(罗姆)
2447
VSON-10
315000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,

BU705DF数据表相关新闻