HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. ■ BU208D AND BU508DFI ARE STM PREFERRED SALESTYPES ■ HIGH VOLTAGE CAPABILITY ■ U.L. R

SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage-VCES= 1500V(Min.) • Collector Current- IC = 8.0A • Built-in Damper Diode APPLICATIONS • Designed for use in large screen color deflection circuits .

Silicon NPN Power Transistors

DESCRIPTION • High Voltage-VCES= 1500V(Min.) • Collector Current- IC = 8.0A • Built-in Damper Diode APPLICATIONS • Designed for use in large screen color deflection circuits .

NPN POWER TRANSISTORS

NPN POWER TRANSISTORS HORIZONTAL DEFLECTION CIRCUITS IN COLOUR TV RECEIVER APPLICATIONS

Silicon NPN Power Transistor

文件：131.17 Kbytes Page：2 Pages

NPN, horizontal deflection transistor with integrated damper diode. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 60W.

150W NPN High Power BJT Transistor

Silicon NPN Power Transistors

文件：113.5 Kbytes Page：3 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

文件：80.56 Kbytes Page：8 Pages

Multifunctional Through Hole Through Hole

文件：336 Kbytes Page：4 Pages

Axial Lead & Cartridge Fuses

文件：190.87 Kbytes Page：4 Pages

Direct replacement for T6.8 Slide Base

文件：271.31 Kbytes Page：5 Pages

Through Hole DIP Switch

文件：386.25 Kbytes Page：4 Pages

M12-A Male 90 Degree 4 Pin Field Attachable

文件：211.78 Kbytes Page：2 Pages