HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. ■ BU208D AND BU508DFI ARE STM PREFERRED SALESTYPES ■ HIGH VOLTAGE CAPABILITY ■ U.L. R

SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage-VCES= 1500V(Min.) • Collector Current- IC = 8.0A • Built-in Damper Diode APPLICATIONS • Designed for use in large screen color deflection circuits .

Silicon NPN Power Transistors

DESCRIPTION • High Voltage-VCES= 1500V(Min.) • Collector Current- IC = 8.0A • Built-in Damper Diode APPLICATIONS • Designed for use in large screen color deflection circuits .

NPN POWER TRANSISTORS

NPN POWER TRANSISTORS HORIZONTAL DEFLECTION CIRCUITS IN COLOUR TV RECEIVER APPLICATIONS

Silicon NPN Power Transistor

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NPN, horizontal deflection transistor with integrated damper diode. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 60W.

150W NPN High Power BJT Transistor

Silicon NPN Power Transistors

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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

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POWER TRANSISTORS(5.0A,1300-1500V,55W)

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS

5.0 AMPERES NPN SILICON POWER TRANSISTOR 700 VOLTS

Horizontal Deflection Transistor . . . designed for use in televisions. • Collector–Emitter Voltages VCES 1500 Volts • Fast Switching — 400 ns Typical Fall Time • Low Thermal Resistance 1°C/W Increased Reliability • Glass Passivated (Patented Photoglass). Triple Diffused Mesa Te

POWER TRANSISTORS(5.0A,1300-1500V,55W)

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,70-100V)

SCHOTTKY BARRIER RECTIFIER 2.0A 70-100V