SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments and Agencies of the Department of Defense. SCOPE Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance is provided for each device type as specified in MIL-

PCS 2 Watt Linear GaAs MMIC Power Amplifier

General Description The RMBA19500 is a highly linear Power Amplifier. The circuit uses our pHEMT process. It has been designed for use as a driver stage for PCS base stations, or as the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high linearity requir

PCS1900 2 Watt GaAs MMIC Power Amplifier

General Description The RMBA19500A is a highly linear Power Amplifier. The two stage circuit uses our pHEMT process. It has been designed for use as a driver stage for PCS1900 base stations, or as the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high l

PCS1900 2 Watt GaAs MMIC Power Amplifier

General Description The RMBA19500A is a highly linear Power Amplifier. The two stage circuit uses our pHEMT process. It has been designed for use as a driver stage for PCS1900 base stations, or as the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high l

PCS 2 Watt Linear GaAs MMIC Power Amplifier

General Description The RMBA19500 is a highly linear Power Amplifier. The circuit uses our pHEMT process. It has been designed for use as a driver stage for PCS base stations, or as the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high linearity requir