SEMICONDUCTORDEVICE,TRANSISTOR,NPN,SILICON,LOW-POWERTYPES2N2484,2N2484UA,2N2484UB,JAN,JANTX,JANTXV,JANS,JANHC,ANDJANKC

ThisspecificationisapprovedforusebyallDepartmentsandAgenciesoftheDepartmentofDefense. SCOPE Scope.ThisspecificationcoverstheperformancerequirementsforNPN,silicon,low-powertransistors.FourlevelsofproductassuranceisprovidedforeachdevicetypeasspecifiedinMIL-

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500VN-CHANNEL Features: ■SingleEventeffect(SEE)Hardened ■UltraLowRDS(on) ■LowTotalGateChange ■ProtonTolerant ■SimpleDriveRequirements ■EaseofParalleling ■HermeticallySealed ■LightWeight

SurfaceMountQuadNPNTransistor

Description:The2N6989U(TX,TXV)isahermeƟcallysealed,ceramicsurface‐mountdevice,consisƟngof4siliconNPNtransistors.The20pinceramicpackageisidealfordesignswhereboardspaceanddeviceweightareimportantdesignconsideraƟons. TypicalscreeninglotacceptancetestareperM

P-CHANNELJ-FET

P-CHANNELJ-FET EquivalentToMIL-PRF-19500/296

5WATTGLASSZENERDIODES

DESCRIPTION ThisZenerVoltageRegulatorseriesismilitaryqualifiedtoMIL-PRF-19500/356andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized5WattZenerVoltageRegulatorsarehermeticallysealedwithvoidless-glassconstructionusing

POWERMOSFETP-CHANNEL(BVdss=-100V,Rds(on)=0.30ohm,Id=-6.5A)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORS THRU-HOLE-TO-205AF(TO-39) TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylow

POWERMOSFETSURFACEMOUNT(SMD-1)

RDS(on)0.415Ω ID12A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establ

P-CHANNELJ-FET

P-CHANNELJ-FET EquivalentToMIL-PRF-19500/296

5WATTGLASSZENERDIODES

DESCRIPTION ThisZenerVoltageRegulatorseriesismilitaryqualifiedtoMIL-PRF-19500/356andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized5WattZenerVoltageRegulatorsarehermeticallysealedwithvoidless-glassconstructionusing

POWERMOSFETP-CHANNEL(BVdss=-100V,Rds(on)=0.30ohm,Id=-6.5A)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORS THRU-HOLE-TO-205AF(TO-39) TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylow

POWERMOSFETSURFACEMOUNT(SMD-1)

RDS(on)0.415Ω ID12A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establ

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RADIATIONHARDENEDPOWERMOSFETSURFACEMOUNT(SMD-2)

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PortableCordage,2C#18StrBC,PVCIns,PVCJkt,ULTypeSTOW-A

ProductDescription PortableCordage,2Conductor18AWG(42x34)BareCopper,PVCInsulation,PVCOuterJacket,ULTypeSTOW-A

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DESCRIPTION The1N5765,1N6092,1N6093and1N6094seriesindicatorsarehermeticallysealedinTO-46packages.Atinteddiffuseddomelensprovidesgoodon/offcontrastandawideviewingangle.The1N5765indicatorutilizesaGaAsPonGaAsLED.The1N6092(red)and1N6093(yellow)indicatorsuti

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