Enhanced isoCink??Bridge Rectifiers

FEATURES • UL recognition file number E312394 • Thin single in-line package • Glass passivated chip junction • Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU12065S) • Superior thermal conductivity • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material ca

Enhanced isoCink+™ Bridge Rectifiers

UL recognition file number E312394\nThin single in-line package\nGlass passivated chip junction;

Enhanced PowerBridge Rectifiers

文件：99.15 Kbytes Page：6 Pages

Bridge Rectifiers

文件：106.85 Kbytes Page：6 Pages

Bridge Rectifiers

文件：106.85 Kbytes Page：6 Pages

Bridge Rectifiers

文件：101.67 Kbytes Page：6 Pages

封装/外壳：4-SIP，BU-5S 包装：散装 描述：BRIDGE RECT 1P 1KV 12A BU-5S 分立半导体产品 二极管 - 桥式整流器

桥式整流器 12A,1000V,STD,INLINE POWER BRIDGE

Bridge Rectifiers

文件：101.67 Kbytes Page：6 Pages

Bridge Rectifiers

文件：106.85 Kbytes Page：6 Pages

Bridge Rectifiers

文件：106.85 Kbytes Page：6 Pages

封装/外壳：4-SIP，BU 包装：散装 描述：BRIDGE RECT 1P 1KV 3.4A BU 分立半导体产品 二极管 - 桥式整流器

Bridge Rectifiers

文件：106.85 Kbytes Page：6 Pages

Bridge Rectifiers

文件：106.85 Kbytes Page：6 Pages

Bridge Rectifiers

文件：106.85 Kbytes Page：6 Pages

Bridge Rectifiers

文件：101.67 Kbytes Page：6 Pages

Bridge Rectifiers

文件：101.67 Kbytes Page：6 Pages

Bridge Rectifiers

文件：101.67 Kbytes Page：6 Pages

Bridge Rectifiers

文件：101.67 Kbytes Page：6 Pages

Bridge Rectifiers

文件：101.67 Kbytes Page：6 Pages

Recording Writer for MSSI121

Description The MSSI121/241/241B is an one time programmable CMOS VLSI ASIC that can memorize voice for 7-12 / 13-24 seconds using 6-bit MOSEL qualified coding method (MPCM). Most of the necessary circuit are built in like oscillator, ROM, DAC and interface logic. Versatile functions can be perfo

Germanium PNP Transistor Audio Frequency Power Amplifier

Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier.

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board