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BTS410价格
参考价格：￥15.1305
型号：BTS410E2E3062ABUMA1 品牌：INF 备注：这里有BTS410多少钱，2026年最近7天走势，今日出价，今日竞价，BTS410批发/采购报价，BTS410行情走势销售排行榜，BTS410报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOStechnology. Fully protected by embedded protection functions. Features •Overload protection •Current limitatio | SIEMENS 西门子 |   | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOStechnology. Fully protected by embedded protection functions. Features •Overload protection •Current limitatio | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOStechnology. Fully protected by embedded protection functions. Features •Overload protection •Current limitatio | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOStechnology. Fully protected by embedded protection functions. Features •Overload protection •Current limitatio | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOStechnology. Fully protected by embedded protection functions. Features •Overload protection •Current limitatio | SIEMENS 西门子 | | ||
High-side switch PROFET® * High-side switch * Short-circuit protection * Overtemperature protection * Overload protection * Load dump protection?) * Undervoltage and overvollafle sshutdown with auto-restart and hysteresis * Reverse battery protection * Input and status protection * Clamp of negative output | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | INFINEON 英飞凌 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | INFINEON 英飞凌 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features ● Overload protection ● Current limitation ● Short circu | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features ● Overload protection ● Current limitation ● Short circu | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features ● Overload protection ● Current limitation ● Short circu | INFINEON 英飞凌 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | ||
PROFET Smart High Side Power Switch | INFINEON 英飞凌 | | ||
Fast demagnetization of inductive loads 文件：418.63 Kbytes Page：15 Pages | INFINEON 英飞凌 | | ||
Smart High Side Switches - 4,7-42V, 220m?1,8A, Limit(scr) 5A | INFINEON 英飞凌 | | ||
汽车级智能高边开关 | PROFET™ | INFINEON 英飞凌 | | ||
Fast demagnetization of inductive loads 文件：418.63 Kbytes Page：15 Pages | INFINEON 英飞凌 | | ||
封装/外壳：TO-220-5 成形引线 包装：管件 描述：IC PWR SWITCH N-CHAN 1:1 TO220-5 集成电路（IC） 配电开关，负载驱动器 | INFINEON 英飞凌 | | ||
Fast demagnetization of inductive loads 文件：477.46 Kbytes Page：14 Pages | INFINEON 英飞凌 | | ||
封装/外壳：TO-220-5 包装：管件 描述：IC PWR SWITCH N-CHAN 1:1 TO220-5 集成电路（IC） 配电开关，负载驱动器 | INFINEON 英飞凌 | | ||
Fast demagnetization of inductive loads 文件：477.46 Kbytes Page：14 Pages | INFINEON 英飞凌 | | ||
Integrated Soldier Power and Data Management System (ISPDS) with USB.3.0 and 1G LAN Capabilities FEATURES DESCRIPTION The advancement of technologies in the modern warfare has allowed the design of increasingly versatile tools in order to perform effectively and coherently in the battlefield. The modern infantry soldier, fully equipped with advanced weapon and communication systems, has | ENERCON | | ||
Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch 文件：597.06 Kbytes Page：3 Pages | MARATHON | | ||
Heavy-Duty Hydra-Lift Karriers 文件：1.04551 Mbytes Page：3 Pages | MORSE Morse Mfg. Co., Inc. | | ||
Detectable Buried Barricade Tapes 400 Series 文件：53.73 Kbytes Page：2 Pages | 3M | | ||
Celeron M Processor on 65 nm Process 文件：1.93023 Mbytes Page：71 Pages | INTEL 英特尔 | |
BTS410产品属性
- 类型
描述
- 型号
BTS410
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
Smart Highside Power Switch
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
2026+ |
TO220-5 |
500 |
原装正品,假一罚十! |
|||
SEMTECH/美国升特 |
25+ |
TO-263-5 |
5000 |
全新原装正品支持含税 |
|||
INFINEON |
24+ |
TO263-5 |
6000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON |
2025+ |
TO-263 |
4835 |
全新原厂原装产品、公司现货销售 |
|||
MNDSPEED |
24+ |
PLCC68 |
6618 |
公司现货库存,支持实单 |
|||
Infineon(英飞凌) |
23+ |
19850 |
原装正品,假一赔十 |
||||
INF |
25+ |
TO263 |
3000 |
全新原装、诚信经营、公司现货销售 |
|||
Infineon/英飞凌 |
24+ |
TO-263 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INF |
24+ |
TO263 |
5000 |
BTS410规格书下载地址
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DdatasheetPDF页码索引
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