Smart Lowside Power Switch

General Description N channel vertical power FET in Smart SIPMOS chip on chip technology. Fully protected by embedded protected functions. Features • Logic Level Input • Input Protection (ESD) • Thermal shutdown with latch • Overload protection • Short circuit protection • Overvoltage p

汽车级智能低边开关 | HITFET™

N channel vertical power FET in Smart SIPMOS® chip on chip technology. Providing embedded protection functions. • Logic Level Input\n• Input Protection (ESD)\n• Thermal shutdown with latch\n• Overload protection\n• Short circuit protection\n• Overvoltage protection\n• Current limitation\n• Status feedback with external input resistor\n• Analog driving possible\n• AEC qualified\n• Green product (RoHS compliant;

封装/外壳：TO-220-3 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 TO220-3 集成电路（IC） 配电开关，负载驱动器

Smart Low Side Power Switch

General Description N channel vertical power FET in Smart SIPMOS® chip on chip technology. Providing embedded protection functions. Features • Logic Level Input • Input Protection (ESD) • Thermal shutdown with latch • Overload protection • Short circuit protection • Overvoltage protection

汽车级智能低边开关 | HITFET™

采用Smart SIPMOS® 内建芯片技术的N通道垂直功率FET。•提供嵌入式保护功能。\n   • 逻辑电平输入\n• 输入保护（ESD）\n• 具有锁定功能的热关断\n• 过载保护\n• 短路保护\n• 过电压保护\n• 电流限制\n• 最大电流可以通过外部电阻调节\n• 可进行模拟驾驶\n• AEC 认证\n• 环保产品（符合 RoHS）\n\n\n优势:;

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR SWITCH N-CHAN 1:1 TO220-3 集成电路（IC） 配电开关，负载驱动器

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA

POWER TRANSISTORS(10A,60-100V,125W)

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP