Smart Lowside Power Switch

General Description N channel vertical power FET in Smart SIPMOS® technology. Fully protected by embedded protection functions. Features • Logic Level Input • Input Protection (ESD) • Thermal shutdown with auto restart • Green product (RoHS compliant) • Overload protection • Short circuit

采用智能 SIPMOS 技术的 N 通道垂直功率 FET。受到嵌入式保护功能的全面保护。

采用Smart SIPMOS技术的N通道垂直功率FET。完全受嵌入式保护功能保护。\n   • 逻辑电平输入\n• 输入保护（ESD）\n• 热关断时自动重启\n• 环保产品（符合 RoHS）\n• 过载保护\n• 短路保护\n• 过电压保护\n• 电流限制\n• 可进行模拟驾驶\n\n优势:;

Smart Low Side Power Switch

文件：278.88 Kbytes Page：11 Pages

Smart Low Side Power Switch

文件：278.88 Kbytes Page：11 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR SWITCH N-CHAN 1:1 TO252-3 集成电路（IC） 配电开关，负载驱动器

N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB

Zener Diode, 1 Watt 짹5 Tolerance

Features: • Zener Voltage 110V to 200V • Low Cost • Low Zener Impedance • Excellent Clamping • Easily Cleaned with Freon, Alcohol, Chlorothene, and Similar Solvents

Zener Diode, 1 Watt 짹5 Tolerance

Features: • Zener Voltage 110V to 200V • Low Cost • Low Zener Impedance • Excellent Clamping • Easily Cleaned with Freon, Alcohol, Chlorothene, and Similar Solvents

3-Terminal Adjustable Current Sources

文件：273.64 Kbytes Page：14 Pages

3-Terminal Adjustable Current Sources

文件：273.64 Kbytes Page：14 Pages