型号 功能描述 生产厂家 企业 LOGO 操作

GDT Protection Component

Features High insulation resistance » 4KV 10/700ps maximum surge rating in ‘accordance with ITU-TK 21 Ultra low capacitance(

TECHPUBLIC

台舟电子

NPN Epitaxial Planar Transistor

Description The BTC1510E3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: • High BVCEO • Low VCE(SAT) • High current gain • Monolithic construction with built-in base-emitter shunt resistors

CYSTEKEC

全宇昕科技

NPN Epitaxial Planar Transistor

Description The BTC1510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: • High BVCEO • Low VCE(SAT) • High current gain • Monolithic construction with built-in base-emitter shunt resistors

CYSTEKEC

全宇昕科技

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general purpose amplifier and low speed switching application. FEATURES * Very high BVCEO * Very low VCE(SAT) * Very high current gain

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general purpose amplifier and low speed switching application. FEATURES * Very high BVCEO * Very low VCE(SAT) * Very high current gain

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general purpose amplifier and low speed switching application. FEATURES * Very high BVCEO * Very low VCE(SAT) * Very high current gain

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general purpose amplifier and low speed switching application. FEATURES * Very high BVCEO * Very low VCE(SAT) * Very high current gain

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general purpose amplifier and low speed switching application. FEATURES * Very high BVCEO * Very low VCE(SAT) * Very high current gain

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general purpose amplifier and low speed switching application. FEATURES * Very high BVCEO * Very low VCE(SAT) * Very high current gain

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general purpose amplifier and low speed switching application. FEATURES * Very high BVCEO * Very low VCE(SAT) * Very high current gain

UTC

友顺

NPN Epitaxial Planar Transistor

Description The BTC1510FP is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: • High BVCEO • Low VCE(SAT) • High current gain • Monolithic construction with built-in base-emitter shunt resistors • Pb-free package

CYSTEKEC

全宇昕科技

NPN Epitaxial Planar Transistor

Description The BTC1510I3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: • High BVCEO • Low VCE(SAT) • High current gain • Monolithic construction with built-in base-emitter shunt resistors • RoHS compliant package

CYSTEKEC

全宇昕科技

NPN Epitaxial Planar Transistor

Description The BTC1510J3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: • High BVCEO • Low VCE(SAT) • High current gain • Monolithic construction with built-in base-emitter shunt resistors • TO-252 surface mount package

CYSTEKEC

全宇昕科技

NPN Epitaxial Planar Transistor

Description The BTC1510T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: • High BVCEO • Low VCE(SAT) • High current gain • Monolithic construction with built-in base-emitter shunt resistors

CYSTEKEC

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Low Vcesat NPN Epitaxial Planar Transistor

Features • Low VCE(sat), VCE(sat)=0.25V (typical), at IC / IB = 500mA / 20mA • Pb-free lead plating package

CYSTEKEC

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Silicon NPN Epitaxial Planar Transistor

Features • Low saturation voltage, typically VCE(sat)=0.1V at IC/IB=1A/25mA • Excellent DC current gain characteristics • Pb-free lead plating and halogen-free package

CYSTEKEC

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General Purpose NPN Epitaxial Planar Transistor

Description The BTC1815A3 is designed for use in driver stage of AF amplifier and low speed switching. Features • High voltage and high current : VCEO=50V(min), IC=150mA(max) • High HFE and excellent linearity • Complementary to BTA1015A3

CYSTEKEC

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FFC/FPC连接线

BZCN

博众电气

SILICON BIDIRECTIONAL THYRISTORS

DIGITRON

SILICON BIDIRECTIONAL THYRISTORS

文件:688.58 Kbytes Page:4 Pages

DIGITRON

The Fifth Generation, Ultra Small Size, isolated DC-DC Conveter

文件:1.09482 Mbytes Page:14 Pages

BELLNIX

贝尔尼克斯

封装/外壳:模块 包装:散装 描述:DC DC CONVERTER 3.3V 4W 电源 - 板安装 直流转换器

ETC

知名厂家

Isolated Type DC-DC Converter

BELLNIX

贝尔尼克斯

封装/外壳:8-SMD 模块,7 引线 包装:散装 描述:DC DC CONVERTER 3.3V 4W 电源 - 板安装 直流转换器

ETC

知名厂家

The Fifth Generation, Ultra Small Size, isolated DC-DC Conveter

文件:1.09482 Mbytes Page:14 Pages

BELLNIX

贝尔尼克斯

The Fifth Generation, Ultra Small Size, isolated DC-DC Conveter

文件:1.09482 Mbytes Page:14 Pages

BELLNIX

贝尔尼克斯

The Fifth Generation, Ultra Small Size, isolated DC-DC Conveter

文件:1.09482 Mbytes Page:14 Pages

BELLNIX

贝尔尼克斯

The Fifth Generation, Ultra Small Size, isolated DC-DC Conveter

文件:1.09482 Mbytes Page:14 Pages

BELLNIX

贝尔尼克斯

The Fifth Generation, Ultra Small Size, isolated DC-DC Conveter

文件:1.09482 Mbytes Page:14 Pages

BELLNIX

贝尔尼克斯

The Fifth Generation, Ultra Small Size, isolated DC-DC Conveter

文件:1.09482 Mbytes Page:14 Pages

BELLNIX

贝尔尼克斯

The Fifth Generation, Ultra Small Size, isolated DC-DC Conveter

文件:1.09482 Mbytes Page:14 Pages

BELLNIX

贝尔尼克斯

SILICON BIDIRECTIONAL THYRISTORS

文件:688.58 Kbytes Page:4 Pages

DIGITRON

SILICON BIDIRECTIONAL THYRISTORS

文件:688.58 Kbytes Page:4 Pages

DIGITRON

SILICON BIDIRECTIONAL THYRISTORS

文件:688.58 Kbytes Page:4 Pages

DIGITRON

NPN EPITAXIAL PLANAR TRANSISTOR

文件:203.45 Kbytes Page:3 Pages

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

文件:203.45 Kbytes Page:3 Pages

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

文件:203.45 Kbytes Page:3 Pages

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

文件:203.45 Kbytes Page:3 Pages

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

文件:203.45 Kbytes Page:3 Pages

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

文件:203.45 Kbytes Page:3 Pages

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

文件:203.45 Kbytes Page:3 Pages

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

文件:203.45 Kbytes Page:3 Pages

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

文件:203.45 Kbytes Page:3 Pages

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

文件:203.45 Kbytes Page:3 Pages

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

文件:203.45 Kbytes Page:3 Pages

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

文件:203.45 Kbytes Page:3 Pages

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

文件:203.45 Kbytes Page:3 Pages

UTC

友顺

NPN Epitaxial Planar Transistor

文件:228.91 Kbytes Page:6 Pages

CYSTEKEC

全宇昕科技

NPN Epitaxial Planar Transistor

文件:228.91 Kbytes Page:6 Pages

CYSTEKEC

全宇昕科技

NPN Epitaxial Planar Transistor

文件:245.28 Kbytes Page:7 Pages

CYSTEKEC

全宇昕科技

NPN Epitaxial Planar Transistor

文件:245.28 Kbytes Page:7 Pages

CYSTEKEC

全宇昕科技

BTC1产品属性

  • 类型

    描述

  • 型号

    BTC1

  • 制造商

    Banner Engineering

  • 功能描述

    Glass Fiber<Br>Concentric Bifurcated .07 in. Bundle<Br>M6 Threaded Tip<Br>Stainl

更新时间:2025-12-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYSTEK
24+
NA/
4250
原装现货,当天可交货,原型号开票
CYSTEK
22+
SOT-263
100000
代理渠道/只做原装/可含税
UTC/友顺
25+
TO-252
880000
明嘉莱只做原装正品现货
BELLNIX
2450+
MODULE
6540
只做原装正品假一赔十为客户做到零风险!!
BELLNIX
23+
MODULE
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
UTC/友顺
2223+
TO-252
26800
只做原装正品假一赔十为客户做到零风险
UTC/友顺
24+
NA
8000
只做原装,欢迎询价,量大价优
5
全新原装 货期两周
ROHM
23+
SMD
5000
专注配单,只做原装进口现货
UTC(友顺)
2447
TO-252-2(DPAK)
105000
2500个/圆盘一级代理专营品牌!原装正品,优势现货,

BTC1数据表相关新闻