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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
4A Ⅲ&ⅣSERIES TRIACS Features ◇The LGE BTA04/BTB04, 4A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High b | LUGUANG 鲁光电子 |   | ||
4A Ⅲ&ⅣSERIES TRIACS Features ◇The LGE BTA04/BTB04, 4A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High b | LUGUANG 鲁光电子 | | ||
4A Ⅲ&ⅣSERIES TRIACS Features ◇The LGE BTA04/BTB04, 4A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High b | LUGUANG 鲁光电子 | | ||
4A Ⅲ&ⅣSERIES TRIACS Features ◇The LGE BTA04/BTB04, 4A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High b | LUGUANG 鲁光电子 | | ||
4A Ⅲ&ⅣSERIES TRIACS Features ◇The LGE BTA04/BTB04, 4A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High b | LUGUANG 鲁光电子 | | ||
4A TRIACs DESCRIPTION High current density due to double mesa technology; Glass Passivation. | JIEJIE 捷捷微电 | | ||
4A TRIACs DESCRIPTION High current density due to double mesa technology; Glass Passivation. | JIEJIE 捷捷微电 | | ||
4A TRIACs DESCRIPTION High current density due to double mesa technology; Glass Passivation. | JIEJIE 捷捷微电 | | ||
4A Ⅲ&ⅣSERIES TRIACS Features ◇The LGE BTA04/BTB04, 4A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High b | LUGUANG 鲁光电子 | | ||
四象限双向可控硅 | WAYON 维安 | | ||
双向可控硅 | ETC 知名厂家 | ETC | | |
双向可控硅 | ETC 知名厂家 | ETC | | |
4A Ⅲ&ⅣSERIES TRIACS Features ◇The LGE BTA04/BTB04, 4A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High b | LUGUANG 鲁光电子 | | ||
4A Ⅲ&ⅣSERIES TRIACS Features ◇The LGE BTA04/BTB04, 4A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High b | LUGUANG 鲁光电子 | | ||
4A Ⅲ&ⅣSERIES TRIACS Features ◇The LGE BTA04/BTB04, 4A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High b | LUGUANG 鲁光电子 | | ||
4A Ⅲ&ⅣSERIES TRIACS Features ◇The LGE BTA04/BTB04, 4A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High b | LUGUANG 鲁光电子 | | ||
4A Ⅲ&ⅣSERIES TRIACS Features ◇The LGE BTA04/BTB04, 4A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High b | LUGUANG 鲁光电子 | |
BTB04-800产品属性
- 类型
描述
- 型号
BTB04-800
- 功能描述
TRIAC|800V V(DRM)|4A I(T)RMS|TO-220
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
26+ |
TO220 |
60000 |
只有原装 可配单 |
|||
ST |
24+ |
TO220 |
16900 |
支持样品,原装现货,提供技术支持! |
|||
恩XP |
24+ |
SC-73 |
11016 |
公司现货库存,支持实单 |
|||
HSDQ/黄山电 |
24+ |
NA/ |
5250 |
原装现货,当天可交货,原型号开票 |
|||
AMTEK |
25+ |
SMD |
2100 |
原装正品,假一罚十! |
|||
ST |
23+ |
TO220 |
16900 |
正规渠道,只有原装! |
|||
HSDQ/黄山电器 |
24+ |
TO-251 |
100000 |
原装现货 |
|||
ATOM |
19+ |
DNA |
360 |
公司现货,有挂就有货。 |
|||
ST |
2511 |
TO220 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ST |
25+ |
TO220 |
16900 |
原装，请咨询 |
BTB04-800规格书下载地址
BTB04-800参数引脚图相关
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BTB04-800数据表相关新闻
BTA316-800B,127
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2020-12-15
DdatasheetPDF页码索引
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