P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD-technology. FEATURES • Very low RDS(on) • Direct interface to C-MOS, TTL • High-speed switching • No second breakdown

P-channel enhancement mode vertical D-MOS transistor

1 1/16

FEATURES • Gangable up to 6 sections • Extra taps on request • Bushing or servo mount types available • Ohmic value range: 5  up to 100 k • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

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