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BSS138L价格

参考价格:¥0.1265

型号:BSS138L 品牌:Fairchild 备注:这里有BSS138L多少钱,2026年最近7天走势,今日出价,今日竞价,BSS138L批发/采购报价,BSS138L行情走势销售排行榜,BSS138L报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BSS138L

Power MOSFET 200 mA, 50 V

Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Make

ONSEMI

安森美半导体

BSS138L

丝印代码:J1M;MOSFET – Power, N-Channel, SOT-23 200 mA, 50 V

Features • Low Threshold Voltage (VGS(th): 0.85 V−1.5 V) Makes it Ideal for Low Voltage Applications • Miniature SOT−23 Surface Mount Package Saves Board Space • HBM Class 0A, MM Class M1A, CDM Class IV (Note 3) • BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Co

ONSEMI

安森美半导体

BSS138L

丝印代码:J2x;N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

TECHPUBLIC

台舟电子

BSS138L

POWER MOSFET 0.2A, 50V N-CHANNEL

DESCRIPTION The BSS138L is available in SOT 23 p ackage FEATURES ⚫ 50V/0.2A RDS(ON) = 3.5Ω (Max) @VGS=5V ID=0.2A RDS(ON) = 10Ω (Max) @VGS=2.75V ID=0.2A ⚫ Super High dense cell design for extremely low RDS(ON) ⚫ Reliable and Rugged ⚫ Low Threshold Voltage(0.5V-1.5V) Make it Ideal for Low

AITSEMI

创瑞科技

BSS138L

场效应管(MOSFET)

ELECSUPER

静芯

BSS138L

FET

AITSEMI

创瑞科技

BSS138L

场效应管(MOSFET)

TECHPUBLIC

台舟电子

MOSFET – Power, N-Channel, SOT-23 200 mA, 50 V

Features • Low Threshold Voltage (VGS(th): 0.85 V−1.5 V) Makes it Ideal for Low Voltage Applications • Miniature SOT−23 Surface Mount Package Saves Board Space • HBM Class 0A, MM Class M1A, CDM Class IV (Note 3) • BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Co

ONSEMI

安森美半导体

丝印代码:J1;Power MOSFET 200 mA, 50 V

Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes

ONSEMI

安森美半导体

N-CHANNEL POWER MOSFET

Power MOSFET 200 mAmps, 50 Volts N–Channel SOT–23 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low Threshold Voltage (V GS(th): 0.5V...1.5V) makes it

WILLAS

威伦电子

丝印代码:J1M;MOSFET – Power, N-Channel, SOT-23 200 mA, 50 V

Features • Low Threshold Voltage (VGS(th): 0.85 V−1.5 V) Makes it Ideal for Low Voltage Applications • Miniature SOT−23 Surface Mount Package Saves Board Space • HBM Class 0A, MM Class M1A, CDM Class IV (Note 3) • BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Co

ONSEMI

安森美半导体

丝印代码:J2x;N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

TECHPUBLIC

台舟电子

Power MOSFET 200 mA, 50 V

Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Make

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Make

ONSEMI

安森美半导体

丝印代码:J1M;MOSFET – Power, N-Channel, SOT-23 200 mA, 50 V

Features • Low Threshold Voltage (VGS(th): 0.85 V−1.5 V) Makes it Ideal for Low Voltage Applications • Miniature SOT−23 Surface Mount Package Saves Board Space • HBM Class 0A, MM Class M1A, CDM Class IV (Note 3) • BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Co

ONSEMI

安森美半导体

丝印代码:J1M;MOSFET – Power, N-Channel, SOT-23 200 mA, 50 V

Features • Low Threshold Voltage (VGS(th): 0.85 V−1.5 V) Makes it Ideal for Low Voltage Applications • Miniature SOT−23 Surface Mount Package Saves Board Space • HBM Class 0A, MM Class M1A, CDM Class IV (Note 3) • BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Co

ONSEMI

安森美半导体

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

文件:160.95 Kbytes Page:3 Pages

UTC

友顺

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

文件:160.95 Kbytes Page:3 Pages

UTC

友顺

丝印代码:J1;Power MOSFET

文件:75.98 Kbytes Page:6 Pages

ONSEMI

安森美半导体

丝印代码:J1;Power MOSFET 200 mA, 50 V

文件:105.62 Kbytes Page:5 Pages

ONSEMI

安森美半导体

丝印代码:J1;Power MOSFET 200 mA, 50 V N?묬hannel SOT??3

文件:64.019 Kbytes Page:5 Pages

ONSEMI

安森美半导体

丝印代码:J1;Power MOSFET 200 mA, 50 V

文件:133.13 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mAmps, 50 Volts

文件:334.64 Kbytes Page:5 Pages

WILLAS

威伦电子

Power MOSFET 200 mA, 50 V N?묬hannel SOT??3

文件:64.019 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

文件:133.13 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

文件:105.62 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:75.98 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

文件:133.13 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V N?묬hannel SOT??3

文件:64.019 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

文件:105.62 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:75.98 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

文件:133.13 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

文件:105.62 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

文件:133.13 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V N?묬hannel SOT??3

文件:64.019 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

文件:133.13 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V N?묬hannel SOT??3

文件:64.019 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:75.98 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

文件:105.62 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

MOTOROLA

摩托罗拉

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

NEC

瑞萨

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava

NEC

瑞萨

BSS138L产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    50

  • VGS Max (V):

    20

  • VGS(th) Max (V):

    1.5

  • ID Max (A):

    0.2

  • PD Max (W):

    0.225

  • RDS(on) Max @ VGS = 2.5 V(mΩ):

    10000

  • RDS(on) Max @ VGS = 4.5 V(mΩ):

    3500

  • Ciss Typ (pF):

    40

  • Package Type:

    SOT-23-3

更新时间:2026-5-24 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
标准封装
22048
全新原装正品/价格优惠/质量保障
ON(安森美)
25+
SOT-23(SOT-23-3)
7589
全新原装现货,支持排单订货,可含税开票
ONS(安森美)
25+
SOT-23
0
公司原装现货,热卖中!
ONS
25+
SOT-23
5000
公司原装现货,常备物料!
ON-SEMI
22+
N/A
20000
原装正品 香港现货
ON/安森美
25+
SOT-23
32000
ON/安森美全新特价BSS138LT1G即刻询购立享优惠#长期有货
ON(安森美)
24+
SOT-23(SOT-23-3)
16860
原装正品现货支持实单
onsemi(安森美)
22+
SOT-23
3000
ON
26+
SOT-23
60000
只有原装,一站式BOM配单
ON
22+
3000
ON代理分销,价格优势现货假一罚十

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