BSS138LT1价格

参考价格:¥0.1211

型号:BSS138LT1G 品牌:ONSemi 备注:这里有BSS138LT1多少钱,2026年最近7天走势,今日出价,今日竞价,BSS138LT1批发/采购报价,BSS138LT1行情走势销售排行榜,BSS138LT1报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BSS138LT1

Power MOSFET 200 mA, 50 V

Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes

ONSEMI

安森美半导体

BSS138LT1

N-CHANNEL POWER MOSFET

Power MOSFET 200 mAmps, 50 Volts N–Channel SOT–23 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low Threshold Voltage (V GS(th): 0.5V...1.5V) makes it

WILLAS

威伦电子

BSS138LT1

Power MOSFET

文件:75.98 Kbytes Page:6 Pages

ONSEMI

安森美半导体

BSS138LT1

Power MOSFET 200 mA, 50 V

文件:105.62 Kbytes Page:5 Pages

ONSEMI

安森美半导体

BSS138LT1

Power MOSFET 200 mAmps, 50 Volts

文件:334.64 Kbytes Page:5 Pages

WILLAS

威伦电子

BSS138LT1

Power MOSFET 200 mA, 50 V N?묬hannel SOT??3

文件:64.019 Kbytes Page:5 Pages

ONSEMI

安森美半导体

BSS138LT1

Power MOSFET 200 mA, 50 V

文件:133.13 Kbytes Page:5 Pages

ONSEMI

安森美半导体

BSS138LT1

MOSFETs

WILLAS

威伦电子

N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

TECHPUBLIC

台舟电子

MOSFET – Power, N-Channel, SOT-23 200 mA, 50 V

Features • Low Threshold Voltage (VGS(th): 0.85 V−1.5 V) Makes it Ideal for Low Voltage Applications • Miniature SOT−23 Surface Mount Package Saves Board Space • HBM Class 0A, MM Class M1A, CDM Class IV (Note 3) • BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Co

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Make

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V N?묬hannel SOT??3

文件:64.019 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

文件:133.13 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

文件:105.62 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:75.98 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

文件:133.13 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

文件:133.13 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V N?묬hannel SOT??3

文件:64.019 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

文件:105.62 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:75.98 Kbytes Page:6 Pages

ONSEMI

安森美半导体

60V N-Channel MOSFET

JSMSEMI

杰盛微

场效应管

HXYMOS

华轩阳电子

BSS138LT1产品属性

  • 类型

    描述

  • 型号

    BSS138LT1

  • 功能描述

    MOSFET 50V 200mA N-Channel

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-27 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
25+
SOT-23(SOT-23-3)
7589
全新原装现货,支持排单订货,可含税开票
ON/安森美
2026+
SOT23
500
原装正品,假一罚十!
NK
24+
SOT-23
33000
原装现货
ON
23+
SOT-23
3000
原装正品假一罚百!可开增票!
ON(安森美)
23+
TO-236-3,SC-59,SOT-23-3
17749
公司只做原装正品,假一赔十
ONS
25+
SOT-23
5000
公司原装现货,常备物料!
ONS(安森美)
25+
SOT-23
0
公司原装现货,热卖中!
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
LRC
26+
Sot-323
86720
全新原装正品价格最实惠 假一赔百
ON(安森美)
25+
标准封装
8000
原装,请咨询

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