50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control

丝印代码：SS；Plastic-Encapsulate MOSFETS

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible APPLICATION Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays

丝印代码：J2x；N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

N 沟道逻辑电平增强型场效应晶体管 50V，0.22A，1.6Ω

N-Channel Logic Level Enhancement Mode Field Effect Transistor, 50 V 0.22 A, 1.6 Ω •低导通电阻\n•低栅极阈值电压\n•低输入电容\n•快速开关速度\n•低输入/输出泄漏\n•超小型表面贴装封装\n•无铅/符合RoHS标准\n•根据JEDEC A114A，ESD HBM=2000V；根据JEDEC C101C，ESD CDM = 2000V;

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

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NCE N-Channel Enhancement Mode Power MOSFET

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N-Channel 60-V (D-S) MOSFET

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MOSFET

mosfets

丝印代码：38K；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control

丝印代码：38K；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control

N-Channel Enhancement Mode MOSFET

Features • Halogen and Antimony Free(HAF), RoHS compliant • Typical ESD Protection HBM Class 1C Applications • Portable appliances • Battery management

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：147.92 Kbytes Page：6 Pages

Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava