Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

PNP Epitaxial Silicon Transistor

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications Medium Power Linear and Switching Applications

Plastic Medium Power Silicon PNP Transistor

Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • Pb−Free Packages are Available* • DC Current Gain − hFE = 40 (Min) @

PNP power transistors

DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complements: BD135, BD137 and BD139. FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • General purpose power applications, e.g. driver stages in hi-fi amplifiers and televisi

PNP SILICON TRANSISTOR

DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. The complementary NPN types are the BD135/BD137/ BD139.

EPITAXIAL SILICON POWER TRANSISTORS

PNP EPITAXIAL SILICON POWER TRANSISTORS Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD135, BD137, BD139

Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

isc Silicon PNP Power Transistor

DESCRIPTION • With TO-126 package • High current • Complement to type BD135/137/139 APPLICATIONS • Driver stages in high-fidelity amplifiers and television circuits

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·High current ·Complement to type BD135/137/139 APPLICATIONS ·Driver stages in high-fidelity amplifiers and television circuits

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High Current ● Complement To BD135, BD137 And BD139

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High Current ● Complement To BD135, BD137 And BD139

PNP General Purpose Transistor

FEATURES • High Current

PNP General Purpose Transistor

FEATURES • High Current

PNP SILICON TRANSISTORS

POWER TRANSISTORS PNP SILICON

PNP General Purpose Transistor

FEATURES High Current

PNP SILICON TRANSISTORS

Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. Fe

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: -1.5 A Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP PLASTIC POWER TRANSISTORS

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: -1.5 A Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD135, BD137 And BD139

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS PNP 60V 1.5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS PNP 60V 1.5A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar Transistor

晶体管

1.5 A，60 V，PNP 双极功率晶体管

TRANSISTOR (PNP)

文件：216.56 Kbytes Page：2 Pages

Silicon PNP transistor in a TO-126F Plastic Package.

文件：752.35 Kbytes Page：6 Pages

Medium Power Linear and Switching Applications

文件：54.36 Kbytes Page：4 Pages

PNP SILICON TRANSISTORS

文件：76.38 Kbytes Page：4 Pages

Silicon PNP Power Transistor

文件：131.41 Kbytes Page：2 Pages

Silicon NPN Power Transistors

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SILICON PLANAR EPITAXIAL POWER TRANSISTORS.

文件：74.34 Kbytes Page：3 Pages

GERMANIOVE TRANZISTORY

文件：1.9422 Mbytes Page：14 Pages

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

PNP power transistors

DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complements: BD135, BD137 and BD139. FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • General purpose power applications, e.g. driver stages in hi-fi amplifiers and televisi

Single Bipolar Transistor

Features • This product is available in AEC-Q101 Qualified and PPAP Capable also. Applications • Driver stages in hi-fi amplifier and television circuit. Discription Designed for use as Audio Amplifier and Drivers Utilizing

PNP General Purpose Transistor

FEATURES • High Current

PNP General Purpose Transistor

FEATURES • High Current

PNP SILICON TRANSISTORS

POWER TRANSISTORS PNP SILICON

PNP General Purpose Transistor

FEATURES High Current

PNP Epitaxial Silicon Transistor

Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−Free Devices

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

PNP power transistors

DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complements: BD135, BD137 and BD139. FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • General purpose power applications, e.g. driver stages in hi-fi amplifiers and televisi

PNP General Purpose Transistor

FEATURES High Current

PNP General Purpose Transistor

FEATURES • High Current

PNP General Purpose Transistor

FEATURES • High Current

Single Bipolar Transistor

Features • This product is available in AEC-Q101 Qualified and PPAP Capable also. Applications • Driver stages in hi-fi amplifier and television circuit. Discription Designed for use as Audio Amplifier and Drivers Utilizing

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications Medium Power Linear and Switching Applications

PNP Epitaxial Silicon Transistor

Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−Free Devices

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

PNP SILICON TRANSISTORS

POWER TRANSISTORS PNP SILICON

PNP General Purpose Transistor

FEATURES • High Current

PNP General Purpose Transistor

FEATURES • High Current

PNP General Purpose Transistor

FEATURES High Current

Plastic Medium Power Silicon PNP Transistor

Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • Pb−Free Packages are Available* • DC Current Gain − hFE = 40 (Min) @

TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD135, BD137 And BD139

PNP General Purpose Transistor

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