找IC，尽在114IC

芯片资料
  • 芯片资料
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 制造商
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料 > BSS138DW

BSS138DW价格

参考价格：￥0.3426

型号：BSS138DW-7-F 品牌：Diodes 备注：这里有BSS138DW多少钱，2026年最近7天走势，今日出价，今日竞价，BSS138DW批发/采购报价，BSS138DW行情走势销售排行榜，BSS138DW报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BSS138DW

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast

DIODES

美台半导体

BSS138DW

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Available in Lead Free/RoHS Compliant Version (Note 4) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Notes 5 and 6)

DIODES

美台半导体

BSS138DW

丝印代码：K38；Dual N-Channel 60 V (D-S) MOSFET

•Low On-Resistance:1.5 FEATURES • Halogen-free According to IEC 61249-2-21 Definition Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

DGNJDZ

南晶电子

BSS138DW

丝印代码：K38；Dual N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition •Low On-Resistance:2.5 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

DGNJDZ

南晶电子

BSS138DW

丝印代码：SS；Dual N-Channel MOSFET

Feature  High density cell design for extremely low RDS(on)  Rugged and Relaible Application  Direct Logic-Level Interface: TTL/CMOS  Battery Operated Systems  Solid-State Relays

GWSEMI

唯圣电子

BSS138DW

N-Channel MOSFET

Application « Reverse Battery protection » Load switch « Power management » Motor Control

TECHPUBLIC

台舟电子

BSS138DW

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

BSS138DW

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：105.91 Kbytes Page：5 Pages

DIODES

美台半导体

BSS138DW_09

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Available in Lead Free/RoHS Compliant Version (Note 4) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Notes 5 and 6)

DIODES

美台半导体

BSS138DW_V01

Dual N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition •Low On-Resistance:2.5 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

DGNJDZ

南晶电子

BSS138DW-7-F

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Available in Lead Free/RoHS Compliant Version (Note 4) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Notes 5 and 6)

DIODES

美台半导体

BSS138DWK

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control

DIODES

美台半导体

BSS138DWK

50V N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DIODES

美台半导体

BSS138DWK-13

丝印代码：38D；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control

DIODES

美台半导体

BSS138DWK-7

丝印代码：38D；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control

DIODES

美台半导体

BSS138DWQ

Low On-Resistance

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switchin

DIODES

美台半导体

BSS138DWQ

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance\nLow Gate Threshold Voltage\nLow Input Capacitance\nFast Switching Speed;

DIODES

美台半导体

BSS138DWQ-13

Low On-Resistance

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switchin

DIODES

美台半导体

BSS138DWQ-7

Low On-Resistance

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switchin

DIODES

美台半导体

BSS138DW_1

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：105.91 Kbytes Page：5 Pages

DIODES

美台半导体

BSS138DW_15

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：219.76 Kbytes Page：6 Pages

DIODES

美台半导体

BSS138DW-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：105.91 Kbytes Page：5 Pages

DIODES

美台半导体

BSS138DW-7-F

Dual N-Channel 60 V (D-S) MOSFET

文件：945.68 Kbytes Page：6 Pages

VBSEMI

微碧半导体

BD138

Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

MOTOROLA

摩托罗拉

UPG138

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

NEC

瑞萨

UPG138GV

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

NEC

瑞萨

UPG138GV

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

NEC

瑞萨

UPG138GV

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava

NEC

瑞萨

BSS138DW产品属性

  • 类型

    描述

  • Automotive Compliant PPAP：

    BSS138DWQ

  • Polarity：

    N+N

  • ESD Diodes：

    No

  • VDS：

    50 V

  • VGS：

    20 ±V

  • IDS @ TA = +25°C：

    0.2 A

  • PD @ TA = +25°C：

    0.2 W

  • RDS(ON) Max @ VGS (10V)：

    3500 mΩ

  • RDS(ON) Max @ VGS (4.5V)：

    N/A mΩ

  • RDS(ON) Max @ VGS (2.5V)：

    N/A mΩ

  • RDS(ON) Max @ VGS (1.8V)：

    N/A mΩ

  • VGS (th) Max：

    1.5 V

  • QG Typ @ VGS = 4.5V (nC)：

    N/A nC

  • QG Typ @ VGS = 10V (nC)：

    N/A nC

  • Packages：

    SOT363

BSS138DW供应商更多...

更新时间：2026-8-3 14:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
华富测量(深圳)传感技术有限公司
BSS05-12
原厂
2023+
模块
600
专营模块,继电器,公司原装现货
询价
深圳市东来宝电子科技有限公司
BSS138DW-7-F
DIODES
24+
Tube
333000
郑重承诺只做原装进口现货
询价
深圳市中联芯电子有限公司
BSS138DW-7-F
DIODES
25+
SOT363
6000
只做原装 有挂有货 假一赔十
询价
深圳市一线半导体有限公司
BSS-05S0R6
24+
ZIP
175
询价
深圳市高捷芯城科技有限公司
BSS138DW-7-F
Diodes(美台)
26+
SC-70-6(SOT-363)
10548
原厂订货渠道,支持账期,一站式服务!
询价
深圳市纳艾斯科技有限公司
BSS138DW-7-F
DIODES
24+
SOT-363
6000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
中天科工半导体（深圳）有限公司
BSS138DW-7-F
DIODES/美台
25+
SOT-363-6
32360
DIODES/美台全新特价BSS138DW-7-F即刻询购立享优惠#长期有货
询价
深圳市米数科技有限公司
BSS138DW-7-F
DIODES
25+
SOT363-6
12880
原装,诚信经营
询价
深圳市坤融电子科技有限公司
BSS138DWQ
DIODES/美台
2025+
SOT-363
5000
原装进口价格优 请找坤融电子!
询价
深圳市创新迹电子有限公司
BSS138DW-7-F
DIODES/美台
2021+
SOT363
9000
原装现货,随时欢迎询价
询价

BSS138DW芯片相关品牌

BSS138DW规格书下载地址

BSS138DW参数引脚图相关

BSS138DW数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2026 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示