N-Channel Enhancement Mode Field Effect Transistor

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Small Signal MOSFETS

N-Channel MOSFET

FEATURES  Epoxy meets UL 94 V-0 flammability rating  High density cell design for low RDS(ON)  Voltage controlled small signal switch  Rugged and reliable  ESD Protected 2KV HBM APPLICATIONS  Direct Logic-Level Interface: TTL/CMOS  Load Switch for Portable Devices  DC/DC Converter

N-Channel MOSFET

Application « Reverse Battery protection i © Load switch « Power management « Motor Control

丝印代码：QL；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175

丝印代码：D4；60 V, dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench

丝印代码：JL；60 V, single N-channel Trench MOSFET

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60 V, single N-channel Trench MOSFET

60 V, single N-channel Trench MOSFET

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Small Signal MOSFETS

1 5/16 (33.3 mm) Industrial Single Turn, Bushing Mount, Conductive Plastic Potentiometer

FEATURES • Center tap available • Continuous rotation and mechanical stops both standard • Suitable model for all types of industrial applications • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

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RUGGED & LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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Aluminum Electrolytic Capacitors Axial Miniature, Long-Life

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