Smart Power High-Side-Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions.

Smart High-Side Power Switch

文件：238.05 Kbytes Page：17 Pages

汽车级智能高边开关 | PROFET™

Smart High Side Switches - 60mΩ, 5-34V 2,6A, P-DSO-8

Smart High-Side Power Switch

文件：238.05 Kbytes Page：17 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR SWITCH N-CHAN 1:1 PDSO-8 集成电路（IC） 配电开关，负载驱动器

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 5000 V Mean forward current 4175 A Surge current 45 kA

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 4175 A Surge current 45 kA

MEDIUM POWER LOW VOLTAGE TRANSISTOR

MEDIUM POWER LOW VOLTAGE TRANSISTOR. DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS

Description The VN772K is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two low side switches. Both the double high side and low side switches are made using STMicroelectronics VIPower™ M0-3 Technology. Features ■ Suited as low voltage brid

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS

Description The VN772K is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two low side switches. Both the double high side and low side switches are made using STMicroelectronics VIPower™ M0-3 Technology. Features ■ Suited as low voltage brid