MEDIUM POWER LOW VOLTAGE TRANSISTOR

MEDIUM POWER LOW VOLTAGE TRANSISTOR. DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882

Audio Frequency Power Amplifier

Audio Frequency Power Amplifier • Low Speed Switching • Complement to KSD882

PNP EPITAXIAL PLANAR TRANSISTOR

Description The HSB772 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver. Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature..............................................................................

EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING)

AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES • Complementary to KTD882.

PNP Silicon Transistor

Description • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with STD882 • Switching Application

TO-126 Plastic-Encapsulate Transistors

FEATURES Power dissipation PCM: 1.25W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP TRANSISTOR

● AF OUTPUT AMPLIFIER ● FOR DC-DC CONVERTER ● FOR CAMERA MOTOR DRIVER

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 625 mW (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP MEDIUM POWER TRANSISTOR

Description The device is a PNP transistor manufactured by using planar Technology resulting in rugged high performance devices. The complementary NPN type is 2SD882. Features ■ High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay driver ■

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM: 1.25 W(Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: - 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP Type Plastic Encapsulate Transistors

Features * Power Dissipation: PCM: 625 mW (Tamb=25 °C)

TRANSISTOR (PNP)

FEATURES Low speed switching

PNP (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING)

Audio Frequency Power Amplifier • Low Speed Switching • Complement to KSD882

SOT - 8 9 Plastic-Encapsulate Transistors

DESCRIPTION The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver. FEATURES • Low saturation voltage VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A) • Excellent hFE linearity and high hFE hFE = 60 to 400

SOT-223 Plastic-Encapsulate Transistors

FEATURES Power Dissipation:1.25W Low Collector-emitter Saturation Voltage

SOT-89 Plastic-Encapsulate Transistors

PNP SILICON POWER TRANSISTOR

DESCRIPTION The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver. FEATURES • Low saturation voltage VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A) • Excellent hFE linearity and high hFE hFE = 60 to 400

GENERAL PURPOSE TRANSISTORS PNP PLASTIC-ENCAPSULATE TRANSISTORS

DESCRIPTION The B772 is available in SOT 89 p ackage FEATURES  A vailabl e in SOT 89 p ackage

PNP Silicon Epitaxial Planar Transistor

FEATURES Low speed switching. Low saturation voltage. Excellent hFE linearity and high hFE. Complementary: D882 APPLICATIONS Audio frequency power amplifier.

PNP medium power transistor

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SOT-89 Plastic-Encapsulate Transistors

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Low speed switching

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Plastic-Encapsulate Transistors

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SOT-89 transistors

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Plastic-Encapsulate PNP Transistors

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TRANSISTOR竊늁NP竊

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PNP Silicon Epitaxial Planar Transistor

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PNP TRANSISTOR

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TRANSISTOR (PNP)

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SOT-223 Plastic-Encapsulate Transistors

FEATURES Power Dissipation:1.25W Low Collector-emitter Saturation Voltage

SAW Components Low-Loss Filter for Mobile Communication 1960,0 MHz

Features ■ Low-loss RF filter for mobile telephone PCS systems, receive path ■ High selectivity ■ Low amplitude ripple ■ Usable passband 60 MHz ■ Unbalanced to balanced operation ■ No external matching required ■ Package for Surface Mounted Technology (SMT)

Low-Loss Filter for Mobile Communication

Features ■ Low-loss RF filter for mobile telephone EGSM system, receive path ■ Low amplitude ripple ■ Usable passband 35 MHz ■ Unbalanced to balanced operation ■ Excellent symmetry ■ Impedance transformation from 50 Ω to 200 Ω ■ Suitable for GPRS class 1 to 12 ■ Ceramic pac

SAW Components Low-Loss Filter 1575,42 MHz

Features ● Low loss RF filter for GPS receivers ● Unbalanced to unbalanced operation ● Low amplitude ripple ● Package for Surface Mounted Technology (SMT) ● Pb-free Terminals ● Ni, gold-plated

SAW Components Low-Loss Filter for Mobile Communication 836,5 MHz

Features ■ Low-loss RF filter for mobile telephone GSM 850 systems, transmit path ■ Low amplitude ripple ■ Usable passband 25 MHz ■ Balanced to unbalanced operation ■ Impedance transformation from 200 Ω to 50 Ω ■ Ceramic package for Surface Mounted Technology (SMT) Terminals

SAW Components Low-Loss Filter for Mobile Communication 836,5 MHz

Features ■ Low-loss RF filter for mobile telephone GSM 850 systems, transmit path ■ Low amplitude ripple ■ Usable passband 25 MHz ■ Balanced to unbalanced operation ■ Impedance transformation from 200 Ω to 50 Ω ■ Ceramic package for Surface Mounted Technology (SMT) Terminals ■ Ni, gold-pla

SAW Components Low-Loss Filter 1575,42 MHz

Features ● Low loss RF filter for GPS receivers ● Unbalanced to balanced operation ● Low amplitude ripple ● Impedance transformation from 50 Ω to 100 Ω ● Package for Surface Mounted Technology (SMT) ● Pb-free Terminals ● Ni, gold-plated

SAW Components Low-Loss Filter 2140,0 MHz

Features ● Low loss RF filter ● Unbalanced to balanced operation ● Low amplitude ripple ● Impedance transformation from 50 Ω to 100 Ω ● Suitable for GPRS class 1 to 12 ● Pb-Free ● Package for Surface Mounted Technology (SMT) Terminals ● Ni, gold-plated

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver.

Bipolar Junction Transistor

FEATURES ● Features of good high temperature ● High switching speed APPLICATION Charger、 Emergency lamp and Electric toy control circuit

PNP Plastic-Encapsulated Transistor

FEATURES
Low speed switching.

TO-92 Plastic-Encapsulate Transistors

FEATURES Low speed switching

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to D882SS

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to D882SS

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to D882SS

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to D882SS

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to D882SS

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to D882SS

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to D882SS

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to D882SS

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to D882SS

TO-92 Plastic-Encapsulate Transistors

FEATURES Low speed switching

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 625 mW (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP Plastic Encapsulated Transistor

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PNP medium power transistor

文件：109.27 Kbytes Page：8 Pages

PNP Plastic Encapsulated Transistor

文件：208.95 Kbytes Page：2 Pages

PNP Plastic Encapsulated Transistor

文件：208.95 Kbytes Page：2 Pages

PNP Plastic Encapsulated Transistor

文件：208.95 Kbytes Page：2 Pages

PNP Plastic Encapsulated Transistor

文件：208.95 Kbytes Page：2 Pages

PNP Plastic Encapsulated Transistor

文件：208.95 Kbytes Page：2 Pages

PNP Plastic Encapsulated Transistor

文件：208.95 Kbytes Page：2 Pages