N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers. FEATURES • Very low RDS(on) • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

N-channel enhancement mode vertical D-MOS transistor

SCRs 4 AMPERES RMS 50 thru 600 VOLTS

SCRs 4 AMPERES RMS 50 thru 600 VOLTS . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Glassivated Surface for Reliabi

SCRs 4 AMPERES RMS 50 thru 600 VOLTS

SCRs 4 AMPERES RMS 50 thru 600 VOLTS . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Glassivated Surface for Reliabi

SCRs 4 AMPERES RMS 50 thru 600 VOLTS

SCRs 4 AMPERES RMS 50 thru 600 VOLTS . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Glassivated Surface for Reliabi

HIGH EFFICIENCY RECTIFIERS(1.0A,600-1000V)

Switchmode Power Rectifiers . . . Designed for use in switching power supplies. These state-of-the-art devices have the fllowing features: * High Surge Capacity * Low Power Loss, High efficiency. * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge

SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)