N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a 4-pin plastic SOT223 SMD package. FEATURES • High speed switching • No secondary breakdown • Very low on-state resistance. APPLICATIONS • Motor and actuator drivers • Power management • Synchronized rectification.

N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedc • 100 Rg and UIS Tested

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSP030 in SOT223. 2. Features n TrenchMOS™ technology n Fast switching n Low on-state resistance n Logic level compatible n Surface mount package. 3

N-channel TrenchMOS intermediate level FET

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

SMPTE 292M/259M Digital Video Serializer with Video and Ancilliary Data FIFOs and Integrated Cable Driver

文件：329.51 Kbytes Page：29 Pages

DUAL OUTPUT, 30 WATT

文件：171.44 Kbytes Page：3 Pages

HAS SERIES - 30 WATT

文件：229.76 Kbytes Page：3 Pages

Silicon planar type

文件：49.05 Kbytes Page：4 Pages