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BSO130N03MSG

OptiMOS?? M-Series Power-MOSFET

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INFINEON

英飞凌

MOSFET N-CH 30V 9A 8DSO

INFINEON

英飞凌

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP130N03LT is supp

PHILIPS

飞利浦

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intend

PHILIPS

飞利浦

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP130N03LT is supp

PHILIPS

飞利浦

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

PHILIPS

飞利浦

Switching (30V, 13A)

● Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). ● Application Power switching, DC/DC converter. ● Structure Silicon N-channel MOS FET

ROHM

罗姆

BSO130N03MSG产品属性

  • 类型

    描述

  • 技术:

    MOSFET(金属氧化物)

  • 漏源电压(Vdss):

    30V

  • 电流 - 连续漏极(Id)(25°C 时):

    9A(Ta)

  • 驱动电压(最大 Rds On,最小 Rds On):

    4.5V,10V

  • 不同 Id,Vgs 时的 Rds On(最大值):

    13 毫欧 @ 11.1A,10V

  • 不同 Id 时的 Vgs(th)(最大值):

    2V @ 250µA

  • 不同 Vgs 时的栅极电荷 (Qg)(最大值):

    17nC @ 10V

  • Vgs(最大值):

    ±20V

  • 不同 Vds 时的输入电容(Ciss)(最大值):

    1300pF @ 15V

  • 功率耗散(最大值):

    1.56W(Ta)

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装

  • 供应商器件封装:

    PG-DSO-8

  • 封装/外壳:

    8-SOIC(0.154\,3.90mm 宽)

更新时间:2026-5-14 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEO
24+
SOP-8
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INFINEON
20+
SOP-8
32550
原装优势主营型号-可开原型号增税票
INFINEON
23+
NA
1836
专做原装正品,假一罚百!
INFINEON/英飞凌
22+
SOP-8
20000
只做原装
Infineon Technologies
21+
PG-DSO-8
2500
100%进口原装!长期供应!绝对优势价格(诚信经营)!
INFINEON
19+
SOP-8
3137
全新 发货1-2天
INFINEON/英飞凌
新年份
SOP-8
16188
原装正品现货,实单带TP来谈!
INF
23+
SOP8
38233
原装正品,假一罚十
Infineon
原厂封装
9800
原装进口公司现货假一赔百
Infineon Technologies
23+
原装
7000

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