丝印代码：RSS130N03；Nch 30V 13A Power MOSFET

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4V Drive Nch MOS FET

Structure Silicon N-channel MOS FET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC/DC converter.

Switching (30V, 13A)

● Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). ● Application Power switching, DC/DC converter. ● Structure Silicon N-channel MOS FET

4V Drive Nch MOSFET

为支持现有客户而生产的产品。不对新设计出售此产品。 •4V驱动型 Nch 中功率MOSFET;

4V Drive Nch MOS FET

Structure Silicon N-channel MOS FET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC/DC converter.

30V Nch 车载用功率MOSFET

本产品是符合AEC-Q101标准的车载级MOSFET。在SOP8封装中内置30V的Nch MOSFET。内置ESD保护二极管。适合开关用途。 • Low on-resistance\n• Small Surface Mount Package (SOP8)\n• Pb-free lead plating ; RoHS compliant\n• AEC-Q101 Qualified;

Nch 30V 13A Power MOSFET

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MOSFET N-CH 30V 13A 8SOIC

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP130N03LT is supp

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intend

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP130N03LT is supp

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a