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BSN20价格
参考价格：￥0.2600
型号：BSN20 品牌：NXP/PHILIPS 备注：这里有BSN20多少钱，2025年最近7天走势，今日出价，今日竞价，BSN20批发/采购报价，BSN20行情走势销售排行榜，BSN20报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BSN20 | N-channel enhancement mode vertical D-MOS transistor Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSN20 in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package. Applications ■ | Philips 飞利浦 |   | |
BSN20 | N-Channel MOSFET Features ● TrenchMOS™ technology ● Very fast switching ● Logic level compatible ● Subminiature surface mount package. | KEXIN 科信电子 | | |
BSN20 | N-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low | VBSEMI 微碧半导体 | | |
BSN20 | N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Sw | DIODES 美台半导体 | | |
BSN20 | N-Channel Enhancement Mode MOSFET N-Channel Enhancement Mode MOSFET | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | |
BSN20 | N-channel enhancement mode field-effect transistor 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSN20 in SOT23. 2. Features n TrenchMOS™ technology n Very fast switching n Logic level compatible n Subminiature surface mount package. 3. Applicati | NEXPERIA 安世 | | |
BSN20 | N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | |
N-channel enhancement mode vertical D-MOS transistor Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSN20 in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package. Applications ■ | Philips 飞利浦 | | ||
N-channel enhancement mode field-effect transistor Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSN20 in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package. Applications ■ | Philips 飞利浦 | | ||
N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching | Philips 飞利浦 | | ||
N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching | Philips 飞利浦 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Sw | DIODES 美台半导体 | | ||
60 V, N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ElectroStati | NEXPERIA 安世 | | ||
N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a 3 pin plastic SOT323 SMD package. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Thin and thick film circuits • General purpose fast switching applications | Philips 飞利浦 | | ||
N-channel enhancement mode field-effect transistor 文件：296.13 Kbytes Page：13 Pages | Philips 飞利浦 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET 文件：183.98 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET 文件：183.98 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
60 V, N-channel Trench MOSFET | NEXPERIA 安世 | | ||
60 V, N-channel Trench MOSFET 文件：280.82 Kbytes Page：16 Pages | Philips 飞利浦 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET 文件：183.98 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
N-channel enhancement mode vertical D-MOS transistor | ETC 知名厂家 | ETC | |
BSN20产品属性
- 类型
描述
- 型号
BSN20
- 制造商
NXP Semiconductors
- 功能描述
MOSFET N CH 50V 0.173A SOT23
- 制造商
NXP Semiconductors
- 功能描述
MOSFET, N CH, 50V, 0.173A, SOT23
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
SOT23-3 |
23+ |
6000 |
原装现货有上库存就有货全网最低假一赔万 |
|||
恩XP |
21+ |
SOT23 |
20000 |
原装现货假一罚十 |
|||
Nexperia/安世 |
24+ |
SOT-23-3 |
70000 |
全新原装现货特价销售,欢迎来电查询 |
|||
恩XP |
2526+ |
3000 |
全新、原装 |
||||
恩XP |
2017+ |
SOT-23 |
168807 |
原装正品 可含税交易 |
|||
Slkor/萨科微 |
24+ |
SOT-23 |
50000 |
Slkor/萨科微一级代理,价格优势 |
|||
NK/南科功率 |
2025+ |
SOT-23 |
3588 |
国产南科平替供应大量 |
|||
DIODES/美台 |
24+ |
SMD |
160488 |
明嘉莱只做原装正品现货 |
|||
NEXPERIA |
24+ |
SOT-23 |
126624 |
原装正品,现货库存,1小时内发货 |
|||
NEXPERIA/安世 |
20+19+ |
SOT-23-3 |
4080 |
原装现货实单必成 |
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DdatasheetPDF页码索引
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