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位置：首页 > IC中文资料 > BSN20

BSN20价格

参考价格：￥0.2600

型号：BSN20 品牌：NXP/PHILIPS 备注：这里有BSN20多少钱，2026年最近7天走势，今日出价，今日竞价，BSN20批发/采购报价，BSN20行情走势销售排行榜，BSN20报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BSN20

丝印代码：M8-；N-channel enhancement mode vertical D-MOS transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSN20 in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package. Applications ■

PHILIPS

飞利浦

BSN20

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Sw

DIODES

美台半导体

BSN20

N-Channel MOSFET

Features ● TrenchMOS™ technology ● Very fast switching ● Logic level compatible ● Subminiature surface mount package.

KEXIN

科信电子

BSN20

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

VBSEMI

微碧半导体

BSN20

N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

BSN20

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSN20 in SOT23. 2. Features n TrenchMOS™ technology n Very fast switching n Logic level compatible n Subminiature surface mount package. 3. Applicati

NEXPERIA

安世

BSN20

N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation 50V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , other power management functions.

DIODES

美台半导体

BSN20,215

N-channel enhancement mode vertical D-MOS transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSN20 in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package. Applications ■

PHILIPS

飞利浦

BSN20.215

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSN20 in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package. Applications ■

PHILIPS

飞利浦

BSN205

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

PHILIPS

飞利浦

BSN205A

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

PHILIPS

飞利浦

BSN20-7

丝印代码：N20；N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Sw

DIODES

美台半导体

BSN20BK

丝印代码：4S；60 V, N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ElectroStati

NEXPERIA

安世

BSN20BK

60 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic-level compatible\n• Very fast switching\n• Trench MOSFET technology\n• ElectroStatic Discharge (ESD) protection: 2 kV HBM;

NEXPERIA

安世

BSN20W

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a 3 pin plastic SOT323 SMD package. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Thin and thick film circuits • General purpose fast switching applications

PHILIPS

飞利浦

BSN20_00

N-channel enhancement mode field-effect transistor

文件：296.13 Kbytes Page：13 Pages

PHILIPS

飞利浦

BSN20_15

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

文件：183.98 Kbytes Page：6 Pages

DIODES

美台半导体

BSN20-7

丝印代码：N20；N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

文件：183.98 Kbytes Page：6 Pages

DIODES

美台半导体

BSN20BK_15

丝印代码：-4S；60 V, N-channel Trench MOSFET

文件：280.82 Kbytes Page：16 Pages

PHILIPS

飞利浦

BSN20Q-7

丝印代码：N20；N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

文件：183.98 Kbytes Page：6 Pages

DIODES

美台半导体

BSN20W

N-channel enhancement mode vertical D-MOS transistor

ETC

知名厂家

BSN20产品属性

  • 类型

    描述

  • Automotive Compliant PPAP：

    On Request*

  • Polarity：

    N

  • ESD Diodes：

    No

  • VDS：

    50 V

  • VGS：

    20 ±V

  • IDS @ TA = +25°C：

    0.5 A

  • PD @ TA = +25°C：

    0.6 W

  • RDS(ON) Max @ VGS (10V)：

    1800 mΩ

  • RDS(ON) Max @ VGS (4.5V)：

    2000 mΩ

  • RDS(ON) Max @ VGS (2.5V)：

    N/A mΩ

  • RDS(ON) Max @ VGS (1.8V)：

    N/A mΩ

  • VGS (th) Max：

    1.5 V

  • QG Typ @ VGS = 4.5V (nC)：

    N/A nC

  • QG Typ @ VGS = 10V (nC)：

    800 nC

  • Packages：

    SOT23

BSN20供应商更多...

更新时间：2026-7-23 18:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市腾亿芯科技有限公司
BSN20BKR
Nexperia
26+
Modules
100000
现货~进口原装|遥遥领先
询价
深圳诚思涵科技有限公司
BSN20
恩XP
16+
SOT23
13450
进口原装现货/价格优势!
询价
深圳市富芯乐电子科技有限公司
BSN20BKR
Nexperia/安世
25+
SOT-23-3
70000
全新原装现货特价销售,欢迎来电查询
询价
深圳市拓亿芯电子有限公司
BSN20
恩XP
25+
SOT23-3
25000
全新原装现货,假一赔十
询价
深圳市星源辉科技有限公司
BSN20BK
NEXPERIA/安世
26+
SOT-23
18000
原装正品,可配单,支持实单
询价
深圳市富利微电子科技有限公司
BSN20BKR
NEXPERIA/安世
26+
SOT-23-3
33500
全新进口原装现货,假一罚十
询价
深圳市得捷芯城科技有限公司
BSN20
恩XP
25+
N/A
21000
原装正品现货,原厂订货,可支持含税原型号开票。
询价
深圳市芯皇电子有限公司
BSN20-7
DIODES/美台
SOT23-3
23+
6000
原装现货有上库存就有货全网最低假一赔万
询价
中天科工半导体（深圳）有限公司
BSN20-7
DIODES/美台
25+
SOT23
33583
DIODES/美台全新特价BSN20-7即刻询购立享优惠#长期有货
询价
深圳市金华微盛电子有限公司
BSN20
恩XP
2019+
SOT-23
78550
原厂渠道 可含税出货
询价

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BSN20规格书下载地址

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