丝印代码：UQ；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Dis

30 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Low threshold voltage\n• Very fast switching\n• Trench MOSFET technology\n• ElectroStatic Discharge (ESD) protection > 2 kV HBM;

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Annular PNPN devices designed for low cost, high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive

SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)

HIGH FREQUENCY NPN TRANSISTOR ARRAY

DESCRIPTION AND APPLICATIONS The µPA103 is a user configurable Silicon bipolar transistor array consisting of a common emitter pair and three individual bipolar transistors. It is available in a surface mount 14-pin plastic SOP package and a 14-pin ceramic package. Typical applications include: d

HIGH FREQUENCY NPN TRANSISTOR ARRAY

DESCRIPTION AND APPLICATIONS The µPA103 is a user configurable Silicon bipolar transistor array consisting of a common emitter pair and three individual bipolar transistors. It is available in a surface mount 14-pin plastic SOP package and a 14-pin ceramic package. Typical applications include: d