N-Channel Enhancement Mode MOSFET

Features + Advanced trench cell design + Low Thermal Resistance * Low Gate Charge

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=55A@ TC=25℃ ·Drain Source Voltage- VDSS= 80V(Min) APPLICATIONS ·Synchronous Rectification in SMPS ·Switching converters,motor driver,relay driver ·Power Tools ·UPS ·Motor Control

OptiMOS?? Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according t

OptiMOS3 Power-Transistor

OptiMOS™3 Power-Transistor Package • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target appli