N 沟道功率 MOSFET

With the OptiMOS™ 5 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. • Best-in-class on-state resistance\n• Benchmark switching performance(lowest figure of merits R onx Q gandR onx Q gd)\n• RoHS compliant and halogen free\n• Optimized EMI behavior (integrateddamping network)\n\n优势:\n• Highest efficiency\n• Reduction of overall system costs\n• Operation at high-switc;

丝印代码：0996NS；OptiMOS짧 Power-MOSFET, 34 V

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Single-Ended Cordsets

Basic features Approval/Conformity CE cULus EAC WEEE

GaAs 6 Section Attenuator

FEATURES ■ DC - 400 MHz ■ 2.2 dB Insertion Loss ■ 20 mV Transients ■ +21 dBm 0.1 dB Compression @ 1 MHz ■ 1 dB LSB, 63 dB Range ■ TTL Control ■ 24 Pin DIP

SMD 7.0x5.0 16.384MHz Crystal Unit

Features: Surface Mount Seam Weld Package Excellent Reliability Performance Good Frequency Perturbation and Stability over temperature Description and Applications: Surface mount 7.0mmx5.0mm crystal unit for use in wireless telecommunications devices.

RF WIDEBAND TRANSFORMERS

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