Touch Key

General Description The BS801C/02C/04C/06C/08C are a range of 1 to 8 key touch key devices which can detect human body contact using external touch pads. The high level of de vice integration enable applications to be implemented with a minimum number of external components. Features Op

Touch Key

BS801C/02C/04C/06C/08C 具有 1 到 8 个触摸按键，可用来检测外部触摸按键上人手的触摸动作。该系列的芯片具有较高的集成度，使用较少的外部元件便可实现触摸按键的应用。\n\n BS804C 和 BS808C 还提供了一个单线串行接口，可方便与外部 MCU 之间的通讯，实现对芯片设置以及触摸引脚按键检测的目的。\n\n 芯片内部集成电路具有高电源电压抑制比，可减少按键检测错误的发生，这一特性保证在不利环境条件的应用中芯片仍具有很高的可靠性。此系列的触摸芯片具有自动校准功能，低工作电流和低工耗的单键工作状态等特性，为各种触摸按键的应用提供了一种简单而又 • 工作电压：2.2V~5.5V\n• 超低工作电流：3.0µA (VDD=3V)\n• 自动校准功能\n• 可靠的按键检测功能\n• 高电源电压抑制比\n• Level-Hold 或者Toggle 输出\n• One-Key或Any-Key状态\n• 引脚或串口命令可设置按键状态\n• 开漏极NMOS输出\n• 通过引脚或串口检测按键状态;

Plastic High Power Silicon NPN Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD801 is complementary with BD 798, 800, 802

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

Integrated Circuit FM Stereo Demodulator

Description: The NTE801 is a monolithic device in a 14–Lead DIP type package designed for use in solid–state stereo receivers. Features: Requires No Inductors Low External Part Count Only Oscillator Frequency Adjustment Necessary Integral Stereo/Monaural Switch 75mA Lamp Drivin

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead