P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope. Intended for use in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS • High-speed switching • No secondary breakdown.

P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

Features • High Breakdown Voltage • High Input Impedance • Fast Switching Speed • Low Drain-Source On-Resistance • Specially Suited for Telephone Subsets

DMOS Transistors (P-Channel)

FEATURES ♦ High breakdown voltage ♦ High input impedance ♦ Low gate threshold voltage ♦ Low drain-source ON resistance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown ♦ Specially suited for telephone su

DMOS Transistors (P-Channel)

FEATURES\nHigh breakdown voltage\nHigh input impedance\nLow gate threshold voltage\nLow drain-source ON resistance\nHigh-speed switching\nNo minority carrier storage time\nCMOS logic compatible input\nNo thermal runaway\nNo secondary breakdown\nSpecially suited for telephone subsets High breakdown voltage\nHigh input impedance\nLow gate threshold voltage\nLow drain-source ON resistance\nHigh-speed switching\nNo minority carrier storage time\nCMOS logic compatible input\nNo thermal runaway\nNo secondary breakdown\nSpecially suited for telephone subsets;

POWER TRANSISTORS(5.0A,1300-1500V,55W)

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS

5.0 AMPERES NPN SILICON POWER TRANSISTOR 700 VOLTS

Horizontal Deflection Transistor . . . designed for use in televisions. • Collector–Emitter Voltages VCES 1500 Volts • Fast Switching — 400 ns Typical Fall Time • Low Thermal Resistance 1°C/W Increased Reliability • Glass Passivated (Patented Photoglass). Triple Diffused Mesa Te

POWER TRANSISTORS(5.0A,1300-1500V,55W)

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,70-100V)

SCHOTTKY BARRIER RECTIFIER 2.0A 70-100V