Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

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绝缘栅双极型晶体管

650 V, 60 A Field Stop IGBT

Features • Maximum Junction Temperature : TJ = 175oC • Positive Temperature Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A • Fast Switching : EOFF = 7.5 uJ/A • Tighten Parameter Distribution • RoHS Compliant

650V/60A Trehch Field Stop IGBT

Features  650V 60A,VCE(sat)(typ.) = 2.3 V@60A  Field Stop IGBT Technology.  10μs Short Circuit Capability.  Square RBSOA.  Positive VCE (on) Temperature Coefficient. Benefits  High Efficiency for Welding, Inductive heating, UPS and other high frequency application  Rugged Performanc

New Products, Tips and Tools for Power and Mobile Applications

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650V /60A Trench Field Stop IGBT

文件：1.21809 Mbytes Page：8 Pages