1,024-Bit Serial Electrically Erasable PROM

•Features • Low power CMOS Technology • 64 ´ 16bit configuration • 2.7V to 5.5V operation • Low power dissipation – 3mA (max.) active current: 5V – 5mA (max.) standby current: 5V • Auto increment for efficient data dump • Automatic erase-before-write • Hardware and software write protecti

1,024-Bit Serial Electrically Erasable PROM

•Features • Low power CMOS Technology • 64 ´ 16bit configuration • 2.7V to 5.5V operation • Low power dissipation – 3mA (max.) active current: 5V – 5mA (max.) standby current: 5V • Auto increment for efficient data dump • Automatic erase-before-write • Hardware and software write protecti

64횞16bits serial EEPROM

The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using f

1,024-Bit Serial Electrically Erasable PROM

•Features • Low power CMOS Technology • 64 ´ 16bit configuration • 2.7V to 5.5V operation • Low power dissipation – 3mA (max.) active current: 5V – 5mA (max.) standby current: 5V • Auto increment for efficient data dump • Automatic erase-before-write • Hardware and software write protecti

64횞16bits serial EEPROM

The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using f

64횞16bits serial EEPROM

The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using f

1,024-Bit Serial Electrically Erasable PROM

•Features • Low power CMOS Technology • 64 ´ 16bit configuration • 2.7V to 5.5V operation • Low power dissipation – 3mA (max.) active current: 5V – 5mA (max.) standby current: 5V • Auto increment for efficient data dump • Automatic erase-before-write • Hardware and software write protecti

64횞16bits serial EEPROM

The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using f

64횞16bits serial EEPROM

The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using f

64횞16bits serial EEPROM

The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using f

1,024-Bit Serial Electrically Erasable PROM

64 × 16 bits serial EEPROM

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC EEPROM 1KBIT SPI 1MHZ 8SOIC 集成电路（IC） 存储器

64×16bits serial EEPROM

1K/2K/4K 2.0V Microwire Serial EEPROM

Description: The Microchip Technology Inc. 93LC46/56/66 are 1K, 2K and 4K low voltage serial Electrically Erasable PROMs (EEPROM). The device memory is configured as x8 or x16 bits depending on the external logic of levels of the ORG pin. Advanced CMOS technology makes these devices ideal for l

1K/2K/4K 2.5V Microwire Serial EEPROM

文件：328.77 Kbytes Page：20 Pages

1K/2K/4K 2.5V Microwire Serial EEPROM

文件：321.4 Kbytes Page：20 Pages

1K/2K/4K 2.5V Microwire Serial EEPROM

文件：321.4 Kbytes Page：20 Pages

1K/2K/4K 2.5V Microwire Serial EEPROM

文件：321.4 Kbytes Page：20 Pages