1,024-Bit Serial Electrically Erasable PROM

•Features • Low power CMOS Technology • 64 ´ 16bit configuration • 2.7V to 5.5V operation • Low power dissipation – 3mA (max.) active current: 5V – 5mA (max.) standby current: 5V • Auto increment for efficient data dump • Automatic erase-before-write • Hardware and software write protecti

1,024-Bit Serial Electrically Erasable PROM

• Overview\nThe BR93LC46 series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed • Low power CMOS Technology\n• 64 × 16bit configuration\n• 2.7V to 5.5V operation\n• Low power dissipation\n   – 3mA (max.) active current: 5V\n   – 5µA (max.) standby current: 5V\n• Auto increment for efficient data dump\n• Automatic erase-before-write\n• Hardware and software write protection\n   ;

64횞16bits serial EEPROM

The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using f

1,024-Bit Serial Electrically Erasable PROM

•Features • Low power CMOS Technology • 64 ´ 16bit configuration • 2.7V to 5.5V operation • Low power dissipation – 3mA (max.) active current: 5V – 5mA (max.) standby current: 5V • Auto increment for efficient data dump • Automatic erase-before-write • Hardware and software write protecti

64횞16bits serial EEPROM

The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using f

64 × 16 bits serial EEPROM

The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using fiv 1) 64 words × 16 bits EEPROM\n2) Operating voltage range\n   When reading : 2.0 to 5.5V\n   When writing : 2.7 to 5.5V\n3) Low current consumption\n   Operating (at 5V) : 3mA (Max.)\n   Standby (at 5V) : 5µA (Max.)\n4) Address can be incremented automatically during read operations.\n5) Auto erase a;

64횞16bits serial EEPROM

The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using f

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC EEPROM 1KBIT SPI 1MHZ 8SOIC 集成电路（IC） 存储器

64횞16bits serial EEPROM

The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using f

64횞16bits serial EEPROM

The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using f

64횞16bits serial EEPROM

The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using f