SILICON BRIDGE RECTIFIERS

PRV : 50 - 1000 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Ideal for printed circuit board * Pb / RoHS Free

Silicon Bridge Rectifiers 8 Amps to 10 Amps

Silicon Bridge Rectifiers 8 Amps to 10 Amps The plastic material carries U/L recognition 94 V-O

SILICON BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 8.0 Amperes FEATURES ● Surge overload rating -200 amperes peak ● Low forward voltage drop ● Small size; simple installation ● Sliver plated copper leads ● Mounting position: Any

SILICON BRIDGE RECTIFIERS

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Silicon Bridge Rectifiers

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Bridge Rectifier

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SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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Bridge Rectifiers

Bridges: 6.0 to 8.0 amps

Bridge

GLASS PASSIVATED BRIDGE RECTIFIERS

FEATURES ● Surge overload rating -175 amperes peak ● Low forward voltage drop ● Small size; simple installation ● Sliver plated copper leads ● Mounting position: Any

GLASS PASSIVATED BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 8.0 Amperes FEATURES ● Surge overload rating -175 amperes peak ● Low forward voltage drop ● Small size; simple installation ● Sliver plated copper leads ● Mounting position: Any

包装：盒 描述：PRINZING BINDER PACKAGE BILINGUA 计算机设备 配件

包装：盒 描述：PRINZING BINDER PACKAGE BILINGUA 计算机设备 配件

Glass Passivated Bridge Rectifiers

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GLASS PASSIVATED BRIDGE RECTIFIERS

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GLASS PASSIVATED BRIDGE RECTIFIERS

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Plastic High Power Silicon NPN Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD801 is complementary with BD 798, 800, 802

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

Integrated Circuit FM Stereo Demodulator

Description: The NTE801 is a monolithic device in a 14–Lead DIP type package designed for use in solid–state stereo receivers. Features: Requires No Inductors Low External Part Count Only Oscillator Frequency Adjustment Necessary Integral Stereo/Monaural Switch 75mA Lamp Drivin

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead