| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BR5016 | Glass Passivated Single Phase Bridge Rectifiers 文件：175.12 Kbytes Page：3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
BR5016 | 标准整流桥 | GOOD-ARK 固锝电子 | | |
Glass Passivated Single Phase Bridge Rectifiers 文件：185.48 Kbytes Page：3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | ADPOW | | ||
Zener Diode, 1/2 Watt 짹5 Tolerance Features: ● Zener Voltage 2.4 to 200V ● DO35 Package | NTE | |
BR5016产品属性
- 类型
描述
- Package：
BR
- Status：
Active
- VRRM(V)：
1600
- VRMS(V)：
1120
- VDC(V)：
1600
- IF(A)：
50
- IFSM(A)：
450
- VF(V)：
1.2
- IR(uA)：
5
- TJ (Max)(ºC)：
150
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
蓝箭 |
2015+ |
TO220 |
28989 |
一级代理原装现货,特价热卖! |
|||
ROHM |
PBF |
56520 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
MIC/HG |
23+ |
BR-35N |
120000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
Microsemi/美高森美 |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
IPD |
23+ |
原厂正规渠道 |
5000 |
专注配单,只做原装进口现货 |
|||
BLUE ROCKET(蓝箭) |
2447 |
TO-220 |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
Comchip Technology |
22+ |
BRL |
9000 |
原厂渠道,现货配单 |
|||
AVX |
23+ |
7216 |
|||||
26+ |
N/A |
57000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VBSEMI/台湾微碧 |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
BR5016芯片相关品牌
BR5016规格书下载地址
BR5016参数引脚图相关
- ca121
- c960
- c903
- c9012
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- BR515L
- BR50W
- BR50P06
- BR50N10
- BR50N06
- BR508W
- BR508L
- BR508
- BR506W
- BR506L
- BR506
- BR50504W-G
- BR50504-G
- BR-505
- BR504W
- BR504L-G
- BR504L
- BR-504
- BR504
- BR-503
- BR502W
- BR502L-G
- BR502L
- BR502C824MN0002
- BR502A823MA0001
- BR-502
- BR502
- BR501W
- BR501L-G
- BR501L
- BR501E475MA0001
- BR501C225MN0001
- BR501A104KA0001
- BR5016W
- BR5014W
- BR5014
- BR5012W
- BR5012
- BR5010W-G
- BR5010W
- BR5010L-G
- BR5010L
- BR5010-G
- BR5010
- BR-501
- BR501
- BR500I
- BR500GI
- BR500CI-AS
- BR5008W
- BR5008-G
- BR5008
- BR5007-40-05.0-00
- BR5006W
- BR5006-G
- BR5006
- BR5005W
- BR5005L-G
- BR5005L
- BR5005-30-05.0-66
- BR5005
- BR5004W
- BR5004
- BR5002W
- BR5002
- BR5001W
BR5016数据表相关新闻
BR24G04NUX-3TTR
进口代理
2023-9-19BQ78Z100DRZR
BQ78Z100DRZR
2023-4-23BR24G04NUX-3TTR
BR24G04NUX-3TTR
2022-9-2BRL1608T150M
BRL1608T150M
2022-6-30BR5385X
BR5385X，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-4BridgeSwitch?集成电机驱动器
半桥电机驱动器采用两个高压 N 沟道功率 FREDFET，具有低侧和高侧驱动器，采用单体小形封装
2019-9-7
DdatasheetPDF页码索引
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