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BR2501M

SILICON BRIDGE RECTIFIERS

PRV : 50 - 1000 Volts Io : 25 Amperes FEATURES: * High current capability * High surge current capability * High reliability * Low reverse current * Lowforward voltage drop * Pb/ RoHS Free

EIC

BR2501M

SILICON BRIDGE RECTIFIERS

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BR2501M

Bridge Rectifiers

EIC

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

PANJIT

強茂

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES • Plastic Case With Heatsink For Heat Dissipation • Surge Overload Ratings to 400 Amperes • The plastic package has Underwriters Laboratory Flammability Classification 94V-O

PANJIT

強茂

DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

ONSEMI

安森美半导体

Silicon Complementary Transistors High Voltage for Video Output

Features: • High Breakdown Voltage • Excellent High Frequency Characteristics Applications: • High Definition CRT Display • Color TV Chroma Output, High Breakdown Voltage Drivers

NTE

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. (Base-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

PANASONIC

松下

BR2501M产品属性

  • 类型

    描述

  • IF(AV)@TL(℃):

    55

  • VRRM(V):

    100

  • IFSM(A):

    300

  • VF@IF(V):

    1.1

  • VF@IF(A):

    12.5

  • IR(mW):

    10

  • Trr(ns):

    0

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