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型号 功能描述 生产厂家 企业 LOGO 操作
BR2501L

丝印代码:BR2501L;Bridge Rectifiers

FEATURES UL recognition, file #E230084 Universal 3-way terminals: snap-on, wire wrap-around,or PCB mounting High surge current capability Solder dip 275 °C max. 7 s, per JESD 22-B106

RFE

RFE international

BR2501L

整流桥

YJYCOIN

益嘉源

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

PANJIT

強茂

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES • Plastic Case With Heatsink For Heat Dissipation • Surge Overload Ratings to 400 Amperes • The plastic package has Underwriters Laboratory Flammability Classification 94V-O

PANJIT

強茂

DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

ONSEMI

安森美半导体

Silicon Complementary Transistors High Voltage for Video Output

Features: • High Breakdown Voltage • Excellent High Frequency Characteristics Applications: • High Definition CRT Display • Color TV Chroma Output, High Breakdown Voltage Drivers

NTE

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. (Base-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

PANASONIC

松下

BR2501L产品属性

  • 类型

    描述

  • VRM (V):

    100

  • Io_Max(A):

    25

  • IFSM_Max(A):

    400

  • Rated lo(A):

    12.5

  • VF_Max(V):

    1.1

  • IR@25℃IR(uA):

    10

  • IR@125℃IR(uA):

    500

  • RθJA(℃/W):

    2.1

  • Tj(℃):

    -55~+150

  • Status:

    Active

更新时间:2026-8-3 15:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
YANGJIE
24+
BR-L
50000
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