NPN SILICON RF POWER TRANSISTOR

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NPN SILICON RF POWER TRANSISTOR

HiPerDynFRED with soft recovery (Electrically Isolated Back Surface)

Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low cathode to tab capacitance (

Rectifier Diode

Features ● International standard packages JEDEC TO-263 AA surface mountable ● Planar passivated chips ● Epoxy meets UL 94V-0 flammability classification

Fast IGBT Chopper in ISOPLUS i4-PACTM

Features • NPT IGBT - low saturation voltage - no latch up - positive temperature coefficient for easy paralleling • HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current • ISOPLUS i4-PACTM package - isolated back surf

HiPerDynFRED with soft recovery (Electrically Isolated Back Surface)

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Linear power supply single output 15W ~ 50W

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